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onsemi PNP Transistor 600 mA, 40 V dc, 225 mW, Surface Mount SOT-23, 3-Pin MMBT4403LT3G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model MMBT4403LT3G
Width 2.64mm
Mount Type Surface
Series MMBT4403L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V dc
Minimum DC Current Gain hFE 20
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO 40V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc -600mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor features a maximum collector-base voltage of 40 V dc and a maximum emitter-base voltage of -5 V.
  • Minimum DC current gain is 20, ensuring reliable amplification capabilities.
  • It operates over a temperature range from -55°C up to 150°C for dependable performance in varied conditions.
  • The device offers a maximum transition frequency of 100 MHz suitable for high-frequency applications.
  • Compact dimensions of 3.04 mm length, 2.64 mm width, and 1.11 mm height enable space-saving PCB designs.
  • Designed for general purpose use as a single PNP transistor configuration.

Product Description

onsemi MMBT4403LT3G is a general purpose PNP bipolar junction transistor designed for reliable switching and amplification in various electronic circuits. It supports a maximum DC collector current of 600 mA and can withstand collector-emitter voltages up to 40 V dc. Encapsulated in the widely used SOT-23 surface mount package, it features a 3-pin configuration that facilitates easy PCB mounting with minimal space requirements.

The transistor offers a minimum DC current gain (hFE) of 20, ensuring effective signal amplification. Its maximum power dissipation rating of 225 mW allows operation under moderate power conditions typical in consumer and industrial electronics.

Operable in a harsh temperature range from -55°C to 150°C, the MMBT4403LT3G maintains stable performance in diverse environments. Additionally, its high transition frequency of 100 MHz makes it suitable for switching applications involving moderate to high frequencies.

Physical dimensions include a length of 3.04 mm, width of 2.64 mm, and height of 1.11 mm, enabling compact design layouts particularly in modern surface-mount technology assemblies.

Maximum DC collector current: 600 mA. Maximum collector-emitter voltage: 40 V dc. Maximum power dissipation: 225 mW. Minimum DC current gain (hFE): 20. Operating temperature range: -55°C to 150°C. Maximum transition frequency: 100 MHz.

3-pin SOT-23 surface mount package.

This transistor finds extensive applications in industrial, consumer electronics, and communication equipment, providing efficient switching and amplification. It suits use cases in circuit design requiring small form factor bipolar transistors for signal control and power management.

Browse the Bipolar Transistors category at EnvMart for similarly high-quality semiconductor devices from trusted brands for your electronic design and manufacturing needs.

onsemi PNP Transistor 600 mA, 40 V dc, 225 mW, Surface Mount SOT-23, 3-Pin MMBT4403LT3G
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Frequently Asked Questions

The maximum DC collector current for this transistor is 600 mA.

It can withstand a maximum collector-emitter voltage of 40 V dc.

The maximum power dissipation rating is 225 mW.

It operates over a temperature range from -55°C to 150°C.

The dimensions are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

The minimum DC current gain (hFE) is 20.

It is encapsulated in a SOT-23 surface mount package.

The maximum transition frequency is 100 MHz.

This model is a PNP bipolar junction transistor.

The maximum emitter-base voltage is -5 V.

It is suitable for general-purpose switching and amplification in various electronic circuits.

This transistor has a 3-pin configuration.

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