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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 29.03mm |
| Length | 10.67mm |
| Model | KSC5027OTU |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 800V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 7V |
| Maximum Collector Base Voltage VCBO | 1100V |
| Maximum Power Dissipation Pd | 50W |
| Maximum DC Collector Current Idc | 3A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
onsemi KSC5027OTU is a high voltage, 3 ampere NPN bipolar junction transistor (BJT) housed in a durable TO-220 package with 3 pins for through-hole mounting. It is engineered to handle up to 800 V collector-emitter voltage and 50 W power dissipation, making it suitable for high power switching and amplification in industrial and electronic applications. With a maximum operating temperature of 150°C, this transistor is reliable under elevated thermal conditions common in power electronics.
This transistor offers a collector-base voltage rating as high as 1100 V and a minimum current gain (hFE) of 10, ensuring effective switching performance and current amplification. The device’s transition frequency of 1 MHz allows stable operation in moderate frequency circuits. The compact form factor with dimensions of 29.03 mm height, 10.67 mm length, and 4.7 mm width enables integration into compact circuit designs.
Its NPN polarity and single transistor configuration make it ideal for discrete semiconductor circuits requiring reliable power control. The TO-220 package style facilitates efficient heat dissipation and ease of mounting on through-hole PCBs.
Capable of withstanding maximum power dissipation of 50 W for reliable thermal performance. Configured as a single transistor with NPN polarity and three pins in a TO-220 through-hole package. Designed for operation up to 150°C maximum temperature ensuring durability in demanding conditions.
High collector-base voltage tolerance of 1100 V protects device integrity under stress. Transition frequency of 1 MHz suitable for switching and amplification applications. Compact dimensions: height 29.03 mm, length 10.67 mm, and width 4.7 mm facilitating PCB integration.
Minimum DC current gain hFE of 10 ensures effective signal amplification capability.
This transistor is well suited for use in industrial electronics, power supplies, audio amplifiers, and voltage regulation circuits. Its rugged specification makes it an excellent choice for manufacturers and engineers requiring a dependable transistor for high voltage and current handling applications.
Explore the extensive range of semiconductor components at EnvMart for other complementary devices, ensuring optimal circuit performance and reliability.
Explore more products in our Bipolar Transistors category.
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