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onsemi High Voltage 3 A NPN Bipolar Transistor 800 V TO-220 Package KSC5027OTU

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 29.03mm
Length 10.67mm
Model KSC5027OTU
Width 4.7mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-220
Pin Count 3
Maximum Collector Emitter Voltage Vceo 800V
Minimum DC Current Gain hFE 10
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 1100V
Maximum Power Dissipation Pd 50W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Capable of withstanding maximum power dissipation of 50 W for reliable thermal performance.
  • Configured as a single transistor with NPN polarity and three pins in a TO-220 through-hole package.
  • Designed for operation up to 150°C maximum temperature ensuring durability in demanding conditions.
  • High collector-base voltage tolerance of 1100 V protects device integrity under stress.
  • Transition frequency of 1 MHz suitable for switching and amplification applications.
  • Minimum DC current gain hFE of 10 ensures effective signal amplification capability.

Product Description

onsemi KSC5027OTU is a high voltage, 3 ampere NPN bipolar junction transistor (BJT) housed in a durable TO-220 package with 3 pins for through-hole mounting. It is engineered to handle up to 800 V collector-emitter voltage and 50 W power dissipation, making it suitable for high power switching and amplification in industrial and electronic applications. With a maximum operating temperature of 150°C, this transistor is reliable under elevated thermal conditions common in power electronics.

This transistor offers a collector-base voltage rating as high as 1100 V and a minimum current gain (hFE) of 10, ensuring effective switching performance and current amplification. The device’s transition frequency of 1 MHz allows stable operation in moderate frequency circuits. The compact form factor with dimensions of 29.03 mm height, 10.67 mm length, and 4.7 mm width enables integration into compact circuit designs.

Its NPN polarity and single transistor configuration make it ideal for discrete semiconductor circuits requiring reliable power control. The TO-220 package style facilitates efficient heat dissipation and ease of mounting on through-hole PCBs.

Capable of withstanding maximum power dissipation of 50 W for reliable thermal performance. Configured as a single transistor with NPN polarity and three pins in a TO-220 through-hole package. Designed for operation up to 150°C maximum temperature ensuring durability in demanding conditions.

High collector-base voltage tolerance of 1100 V protects device integrity under stress. Transition frequency of 1 MHz suitable for switching and amplification applications. Compact dimensions: height 29.03 mm, length 10.67 mm, and width 4.7 mm facilitating PCB integration.

Minimum DC current gain hFE of 10 ensures effective signal amplification capability.

This transistor is well suited for use in industrial electronics, power supplies, audio amplifiers, and voltage regulation circuits. Its rugged specification makes it an excellent choice for manufacturers and engineers requiring a dependable transistor for high voltage and current handling applications.

Explore the extensive range of semiconductor components at EnvMart for other complementary devices, ensuring optimal circuit performance and reliability.

Explore more products in our Bipolar Transistors category.

onsemi High Voltage 3 A NPN Bipolar Transistor 800 V TO-220 Package KSC5027OTU
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Frequently Asked Questions

The maximum collector-emitter voltage for this model is 800 V.

This transistor can withstand a maximum power dissipation of 50 W.

The transition frequency of this model is 1 MHz, making it suitable for switching and amplification applications.

The dimensions of this transistor are 29.03 mm in height, 10.67 mm in length, and 4.7 mm in width.

It is designed for operation at a maximum temperature of 150°C.

The minimum DC current gain (hFE) for this transistor is 10, ensuring effective signal amplification capability.

This transistor is housed in a TO-220 package, which is suitable for through-hole mounting.

The maximum collector-base voltage (VCBO) rating is 1100 V, which protects the device under stress.

The KSC5027OTU has a pin count of 3.

This model is configured as a single NPN transistor.

The maximum emitter-base voltage (VEBO) is 7 V.

This transistor is suitable for high power switching and amplification in industrial electronics, power supplies, audio amplifiers, and voltage regulation circuits.

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