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Nexperia Silicon Junction Switching Diode, Single, 215 mA Max Forward Current, 100 V Max Reverse Voltage, SOD-882 BAS16L,315

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Nexperia Silicon Junction Switching Diode, Single, 215 mA Max Forward Current, 100 V Max Reverse Voltage, SOD-882 BAS16L,315

Name: Nexperia Silicon Junction Switching Diode, Single, 215 mA Max Forward Current, 100 V Max Reverse Voltage, SOD-882 BAS16L,315
Brand: Nexperia
SKU: 292243
Price: 0.05 USD
Availability: InStock

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Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	0.47mm
Length	1.02mm
Model	BAS16L,315
Width	0.62mm
Mount Type	Surface
Series	BAS16
Maximum Operating Temperature	150°C
Package Type	SOD-882
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	2
Maximum Power Dissipation Pd	250mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	215mA
Maximum Peak Reverse Repetitive Voltage Vrrm	100V
onsemi Silicon Junction, Single, 200 mA, 3-Pin 100 V SOT-23Brand	onsemi

Key Features

Maximum forward current of 215 mA ensures reliable low current operation.
Low forward voltage drop of 1.25 V reduces power losses.
Peak reverse voltage of 100 V with a non-repetitive forward surge current of 4 A.
Extremely fast recovery time of 4 ns for high-speed switching.
Compact SOD-882 surface mount package with 2 pins suitable for high-density circuits.
Operates reliably between -65°C and 150°C ambient temperatures.
Low capacitance and leakage current characteristics support high-frequency use.
Ideal for electronics, power management, and discrete semiconductor applications.

Product Description

Nexperia BAS16L,315 is a silicon junction switching diode specifically designed for small signal switching with a maximum continuous forward current of 215 mA and a peak reverse voltage of 100 V. Its surface mount SOD-882 package measures approximately 1.02 mm in length, 0.62 mm in width, and 0.47 mm in height, making it ideal for compact electronic assemblies.

This diode supports customised high-density circuit designs with its low-leakage and high-voltage capabilities. It features a very low forward voltage drop of 1.25 V and a maximum power dissipation of 250 mW, ensuring efficient energy use in power-sensitive environments.

The fast peak reverse recovery time as low as 4 nanoseconds allows for high-speed switching performance, suitable for applications in power management, signal processing, and other semiconductor discrete component needs. It is surface mount compatible and designed with 2 pins for easy integration into printed circuit boards.

Operating temperature ranges from -65°C up to +150°C supports robust performance in industrial and commercial electronics, HVAC systems, manufacturing control circuits, and laboratory electronics. This diode is not automotive certified but meets essential semiconductor switching requirements.

Maximum forward current: 215 mA. Maximum reverse voltage: 100 V. Package type: SOD-882 surface mount. Peak forward surge current: 4 A. Maximum power dissipation: 250 mW. Recovery time: 4 ns. Operating temperature range: -65 °C to 150 °C.

Compact diode dimensions and low capacitance.

Ideal for designers seeking efficient, fast-switching diodes for compact electronic devices. Explore more semiconductor and Switching Diodes at EnvMart for your electronic component needs.