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onsemi Transistor, 3 A NPN 10 V 3-Pin PCP Surface Mount Single Configuration 2SD1620-TD-E
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4mm |
| Length | 4.5mm |
| Model | 2SD1620-TD-E |
| Width | 1.5mm |
| Mount Type | Surface |
| Series | 2SD1620 |
| Maximum Operating Temperature | 150°C |
| Package Type | PCP |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 10V |
| Minimum DC Current Gain hFE | 140 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 30V |
| Maximum Power Dissipation Pd | 1.3W |
| Maximum DC Collector Current Idc | 3A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- Designed as a general-purpose NPN transistor suitable for applications over 1 A current.
- Features a maximum DC collector current of 3 A and collector emitter voltage of 10 V.
- Surface mount package type PCP with a 3-pin configuration.
- Provides minimum DC current gain (hFE) of 140 for efficient amplification.
- Maximum power dissipation of 1.3 W suitable for moderate power applications.
- High maximum collector base voltage of 30 V and emitter base voltage of 6 V.
- Operating temperature up to 150°C ensures reliable performance under heat stress.
- Compact dimensions with 4.5 mm length, 1.5 mm width, and 4 mm height.
Product Description
onsemi 2SD1620-TD-E is a high-quality general-purpose NPN bipolar transistor designed for surface mount applications. It supports a maximum DC collector current of 3 A and a collector emitter voltage rating of 10 V, making it suitable for various power amplification needs in electronic circuits.
This transistor features a PCP package with a 3-pin layout, facilitating efficient surface mounting on printed circuit boards (PCBs). It offers a minimum DC current gain (hFE) of 140, which enhances its amplification capability while maintaining stability.
With a maximum power dissipation of 1.3 W, the device is ideal for moderate power applications in industrial, consumer electronics, and automotive sectors. Its operating temperature reaches up to 150°C, allowing reliable operation in demanding thermal environments.
The 2SD1620-TD-E transistor has a maximum collector base voltage of 30 V and emitter base voltage of 6 V, providing robust voltage handling capacity. The maximum transition frequency of 1 MHz makes it suitable for switching and amplification tasks in mid-frequency ranges.
Compact physical dimensions (length 4.5 mm, width 1.5 mm, height 4 mm) enable space-efficient PCB design, while the transistor's NPN polarity and single transistor configuration simplify circuit integration.
Designed for general-purpose electronic amplification. Supports operations in industrial, automotive, telecommunications, and consumer electronic circuits. Superior thermal and electrical performance ensures durability and reliability.
Low profile PCP package suits automated surface mount manufacturing processes. Compliant with standard semiconductor manufacturing quality, though lacking specific certifications.
This transistor is a valuable component for engineers designing power amplification and switching circuits in various sectors including industrial machines, embedded systems, and communication devices. Explore more semiconductor products at EnvMart to support your development needs.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum DC collector current for the 2SD1620-TD-E is 3 A.
This model has a collector emitter voltage rating of 10 V.
The minimum DC current gain (hFE) is 140, which enhances its amplification capability.
It has a maximum power dissipation of 1.3 W, making it suitable for moderate power applications.
The dimensions are 4.5 mm in length, 1.5 mm in width, and 4 mm in height.
The maximum operating temperature is 150°C, allowing reliable performance in high-temperature environments.
It uses a PCP package type with a 3-pin configuration for surface mounting.
The maximum collector base voltage (VCBO) is 30 V.
The maximum emitter base voltage (VEBO) is 6 V.
The maximum transition frequency is 1 MHz, suitable for switching and amplification tasks.
The transistor polarity is NPN, which is common for general-purpose applications.
This transistor is designed for general-purpose electronic amplification and can be used in industrial, automotive, telecommunications, and consumer electronic circuits.
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