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onsemi Transistor Dual NPN + PNP 100 mA 45 V Surface Mount 6-Pin SOT-363 BC847BPDW1T1G

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onsemi Transistor Dual NPN + PNP 100 mA 45 V Surface Mount 6-Pin SOT-363 BC847BPDW1T1G

Name: onsemi Transistor Dual NPN + PNP 100 mA 45 V Surface Mount 6-Pin SOT-363 BC847BPDW1T1G
Brand: onsemi
SKU: 292131
Price: 0.04 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.1mm
Length	2.2mm
Model	BC847BPDW1T1G
Width	2.2mm
Mount Type	Surface
Series	BC847BPDW1
Maximum Operating Temperature	150°C
Package Type	SOT-363
Minimum Operating Temperature	-55°C
Pin Count	6
Maximum Collector Emitter Voltage Vceo	45V
Minimum DC Current Gain hFE	200
Transistor Polarity	NPN + PNP
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	50V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	380mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Isolated
Maximum Transition Frequency ft	100MHz
Nexperia Transistor, 100 mA NPN + PNP, 45 V, 6-Pin UMTBrand	Nexperia

Key Features

Maximum DC collector current of 100 mA provides efficient switching capability.
Rated collector emitter voltage of 45 V suitable for low power amplification tasks.
Transistor configuration is isolated for versatile circuit integration.
Compact 6-pin SOT-363 surface mount package measures 2.2mm by 2.2mm by 1.1mm.
Maximum power dissipation of 380 mW supports moderate thermal environments.
Minimum DC current gain (hFE) of 200 ensures consistent transistor performance.
Operating temperature range from -55°C to 150°C accommodates harsh industrial conditions.
Complies with automotive standard AEC-Q101 ensuring reliability in automotive applications.

Product Description

onsemi BC847BPDW1T1G dual transistor combines both NPN and PNP devices in a compact 6-pin SOT-363 surface mount package. It supports a maximum DC collector current of 100 mA and is rated for a collector emitter voltage of 45 V, making it suitable for a variety of electronic circuit applications requiring low power amplification or switching.

The isolated transistor configuration provides flexibility in circuit design. Its minimal dimensions (2.2 mm length and width, 1.1 mm height) allow usage in densely populated printed circuit boards requiring space-efficient components.

With a maximum power dissipation of 380 mW and a minimum DC current gain of 200, this transistor performs reliably in industrial, automotive, and general electronic manufacturing environments. It withstands operating temperatures from -55°C to 150°C and complies with the automotive quality standard AEC-Q101, certifying it for automotive-grade applications.

The BC847BPDW1T1G is optimized for surface mount technology (SMT) and is ideal for applications in consumer electronics, industrial automation, telecommunications, and automotive electronic systems.

Efficient dual NPN and PNP transistor package reducing board space. Suitable for low noise amplification and switching with max 100 mA collector current. Industry-grade reliability with automotive standard AEC-Q101 compliance.

Compact SOT-363 package perfect for surface mount assembly. Wide operating temperature range extends usability in harsh environments. High current gain ensures signal amplification efficiency. Supports various industrial, automotive, and electronic applications.

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