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onsemi Small Signal NPN Transistor, 100 mA, 65 V, 3-Pin SOT-23 Package BC846ALT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.64mm |
| Length | 3.04mm |
| Model | BC846ALT1G |
| Width | 1.11mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 65V |
| Minimum DC Current Gain hFE | 110 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 80V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 300mW |
| Maximum DC Collector Current Idc | 100mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
| Nexperia BC846A,215 Transistor, 100 mA NPN, 65 V, 3-Pin SOT-23Brand | Nexperia |
Key Features
- Maximum DC collector current of 100 mA provides reliable switching performance.
- Collector to emitter voltage rating of 65 V supports moderate voltage applications.
- Package type SOT-23 ensures compact, surface-mount design suitability.
- Maximum power dissipation of 300 mW prevents thermal overload during operation.
- Automotive standard AEC-Q101 compliant, ensuring high quality and reliability.
- Maximum transition frequency up to 100 MHz supports high-speed switching applications.
- Minimum DC current gain (hFE) of 110 ensures adequate amplification.
- Maximum operating temperature up to 150°C for harsh environment resistance.
Product Description
onsemi BC846ALT1G is a small signal NPN bipolar transistor designed for general-purpose switching and amplification with a maximum DC collector current of 100 mA and a collector emitter voltage of 65 V. This device is housed in a compact 3-pin SOT-23 surface mount package, making it ideal for high-density PCB layouts in electronic circuits.
The transistor supports automotive applications being compliant with the AEC-Q101 reliability standard. It offers a maximum power dissipation of 300 mW, allowing efficient thermal management for continuous operation up to 150°C operating temperature.
Its maximum transition frequency of 100 MHz enables use in fast switching circuits such as signal processing and amplification stages. The minimum DC current gain of 110 assures sufficient amplification for small signal applications.
The pin configuration with three terminals provides straightforward integration into various semiconductor circuits. Industrial use cases include automotive electronics, consumer devices, telecommunications equipment, and general electronic circuitry requiring compact low power NPN transistors.
Maximum DC collector current of 100 mA. Maximum collector emitter voltage Vceo of 65 V. Small outline transistor package SOT-23 for surface mount technology. Automotive standard AEC-Q101 qualified. Maximum power dissipation of 300 mW.
Maximum operating temperature 150°C. Transition frequency 100 MHz. Minimum DC current gain 110. Explore more semiconductor components and Bipolar Transistors suitable for your industrial and electronic component needs at EnvMart.
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Frequently Asked Questions
The maximum DC collector current of this model is 100 mA, allowing for reliable switching performance.
This transistor has a collector to emitter voltage rating of 65 V, suitable for moderate voltage applications.
The maximum power dissipation for the BC846ALT1G is 300 mW, which helps prevent thermal overload during operation.
This model supports a maximum transition frequency of 100 MHz, enabling its use in high-speed switching applications.
The minimum DC current gain (hFE) for this transistor is 110, ensuring adequate amplification for small signal applications.
The BC846ALT1G is housed in a compact 3-pin SOT-23 surface mount package, ideal for high-density PCB layouts.
Yes, it is compliant with the AEC-Q101 automotive standard, ensuring high quality and reliability for automotive applications.
The dimensions of this transistor are 3.04 mm in length, 1.11 mm in width, and 2.64 mm in height.
The maximum collector base voltage (VCBO) for this model is 80 V, providing additional operational flexibility.
This transistor features a pin configuration with three terminals, allowing for straightforward integration into various semiconductor circuits.
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