Infineon RF Bipolar Transistor 80 mA NPN 12 V 3-Pin TSFP BFR193FH6327XTSA1

Infineon BFR193FH6327XTSA1 is a state-of-the-art RF bipolar transistor featuring an NPN transistor polarity and designed for low noise and broadband performance in RF applications. It supports a maximum DC collector current of 80 mA and a collector emitter voltage rating of 12 V, packaged in a compact 3-Pin TSFP surface mount format.

This transistor is ideal for various industrial and commercial RF applications including cellular and cordless phone transmitters, DECT, tuners, FM transmitters, and RF modems. Its high transition frequency (ft) of 8 GHz ensures superior frequency response and stability required in precision communication devices.

Designed to meet automotive standards (AEC-Q101), it provides robust operation over a wide temperature range, from -55°C up to 150°C, suitable for demanding environmental conditions encountered in automotive and industrial equipment.

Additional features include a maximum power dissipation of 580 mW and a minimum DC current gain of 70, enabling efficient amplification and signaling tasks. The transistor is RoHS and Pb-free compliant, ensuring environmentally friendly manufacturing and disposal.

The package type TSFP allows easy surface mounting on modern printed circuit boards, contributing to miniaturization and improved assembly processes in electronics manufacturing. Maximum DC collector current of 80 mA suitable for RF circuits.

High transition frequency up to 8 GHz for broadband operation. Surface mount package type TSFP with 3 pins for compact PCB integration. Robust low noise design ideal for cellular, cordless phones, and RF modem circuits. Compliant with RoHS and Pb-free environmental standards.

Supports automotive standard AEC-Q101 ensuring reliability in automotive applications. Wide operating temperature range from -55°C to 150°C for harsh environments. Maximum power dissipation rated at 580 mW for high performance.

Transistor polarity NPN with minimum DC current gain (hFE) of 70. Collector-base voltage maximum 20 V and emitter-base voltage maximum 2 V.

This RF Bipolar Transistor is essential for industrial electronics, telecommunications, and automotive manufacturing sectors where precise, noise-minimized signal amplification is critical. Explore a wide range of RF components and transistors at EnvMart for your design and production needs.