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Nexperia Silicon Junction Switching Diode Common Anode 225 mA 250 V 3-Pin SC-70 BAS21AW,115

Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model BAS21AW,115
Width 1.35mm
Mount Type Surface
Series BAS21
Maximum Operating Temperature 150°C
Package Type SC-70
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Power Dissipation Pd 200mW
Diode Configuration Common Anode
Peak Non-Repetitive Forward Surge Current Ifsm 2.5A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 225mA
Maximum Peak Reverse Repetitive Voltage Vrrm 250V

Key Features

  • Designed for surface mounting with a compact 3-pin SC-70 package.
  • Supports maximum forward current of 225 mA for reliable switching applications.
  • Peak repetitive reverse voltage rated at 250 V ensures durability.
  • Low peak reverse recovery time of 4 ns enables high-speed switching.
  • Maximum power dissipation of 200 mW for efficient thermal performance.
  • Operates within a temperature range of -55°C to 150°C for versatile environments.
  • Maximum forward voltage is 1.25 V for optimized conduction.
  • Pin count of 3 and dimensions of 2.2 mm length, 1.35 mm width, and 1.1 mm height.

Product Description

Nexperia BAS21AW,115 silicon junction switching diode is a high-quality electronic component designed for efficient small-signal switching applications. It features a common anode diode configuration and supports a maximum forward current of 225 mA. Housed in a compact SC-70 surface mount package with 3 pins, it is suitable for automated PCB assembly and space-constrained designs.

This diode has a robust maximum peak repetitive reverse voltage of 250 V and a peak non-repetitive surge current of 2.5 A, delivering high reliability under demanding conditions. Its maximum forward voltage is 1.25 V, ensuring low conduction loss during operation.

The device demonstrates a fast peak reverse recovery time of 4 ns, enabling effective high-speed switching especially useful in power supply circuits and signal processing. The diode can safely dissipate up to 200 mW power and functions reliably across a wide temperature range from -55°C to 150°C, making it well suited to industrial and commercial electronic systems.

Measuring 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height, this diode's small footprint supports high-density circuit layouts and automated surface mounting. The product does not have any listed certifications but meets standard industry quality for discrete semiconductors.

Common uses include switching, rectification, signal modulation, and as a protective element in electronic control circuits. Its low leakage and high-voltage tolerance are ideal for designing customized high density PCBs requiring reliable diode performance at a miniature scale.

Designed for surface mounting with a compact 3-pin SC-70 package. Supports maximum forward current of 225 mA for reliable switching applications. Peak repetitive reverse voltage rated at 250 V ensures durability. Low peak reverse recovery time of 4 ns enables high-speed switching.

Maximum power dissipation of 200 mW for efficient thermal performance. Operates within a temperature range of -55°C to 150°C for versatile environments. Maximum forward voltage is 1.25 V for optimized conduction. Pin count of 3 and dimensions of 2.2 mm length, 1.35 mm width, and 1.1 mm height.

Low leakage and high voltage characteristics suitable for customized high density circuit designs. Ideal for industrial, electronic, and power control applications requiring small signal switching diodes. Explore more electronic components and semiconductors in the Switching Diodes category on EnvMart for diverse industrial and commercial applications.

Nexperia Silicon Junction Switching Diode Common Anode 225 mA 250 V 3-Pin SC-70 BAS21AW,115
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Frequently Asked Questions

The BAS21AW,115 supports a maximum forward current of 225 mA, making it suitable for reliable switching applications.

This model has a peak repetitive reverse voltage rating of 250 V, ensuring durability in high-voltage applications.

It is housed in a compact SC-70 package with a 3-pin configuration, designed for surface mounting.

The BAS21AW,115 has a low peak reverse recovery time of 4 ns, which enables high-speed switching capabilities.

This model measures 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height, making it suitable for high-density circuit layouts.

The maximum power dissipation for the BAS21AW,115 is 200 mW, allowing for efficient thermal performance during operation.

It operates within a temperature range of -55°C to 150°C, making it versatile for various environments.

The maximum forward voltage is 1.25 V, which helps optimize conduction during operation.

This diode is commonly used for switching, rectification, signal modulation, and as a protective element in electronic control circuits.

The BAS21AW,115 has a peak non-repetitive forward surge current rating of 2.5 A, providing high reliability under demanding conditions.

This model features a common anode diode configuration, suitable for various electronic applications.

The BAS21AW,115 is manufactured in India, ensuring adherence to standard industry quality for discrete semiconductors.

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