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onsemi NPN Bipolar Transistor, 200 mA, 40 V, 1W Power, 16-Pin SOIC Surface Mount MMPQ3904

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onsemi NPN Bipolar Transistor, 200 mA, 40 V, 1W Power, 16-Pin SOIC Surface Mount MMPQ3904

Name: onsemi NPN Bipolar Transistor, 200 mA, 40 V, 1W Power, 16-Pin SOIC Surface Mount MMPQ3904
Brand: onsemi
SKU: 287606
Price: 20.22 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1mm
Length	10mm
Model	MMPQ3904
Width	6.2mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	16
Maximum Collector Emitter Voltage Vceo	40V
Minimum DC Current Gain hFE	30
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	60V
Maximum Power Dissipation Pd	1W
Maximum DC Collector Current Idc	200mA
Transistor Configuration	Isolated
Maximum Transition Frequency ft	250MHz

Key Features

This transistor features a maximum power dissipation of 1 watt for reliable performance.
It has a 16-pin SOIC surface mount package suitable for compact PCB designs.
The device operates over a temperature range from -55°C to 150°C.
It has a minimum DC current gain (hFE) of 30 and maximum transition frequency of 250 MHz.
The transistor configuration is isolated with NPN polarity for versatile circuit applications.
Designed without automotive standards and no specific compliance approvals.
Maximum collector base voltage of 60 V and emitter base voltage of 6 V enhance durability.

Product Description

onsemi MMPQ3904 is a high-quality NPN bipolar junction transistor (BJT) designed for electronic circuit applications requiring up to 200 mA collector current and a maximum collector-emitter voltage of 40 V. Packaged in a compact 16-pin SOIC surface mount format, this transistor ensures efficient integration in industry-standard printed circuit board designs.

The device supports robust power dissipation up to 1 watt, allowing reliable operation in moderate power circuits. It exhibits a minimum DC current gain (hFE) of 30 and a maximum transition frequency (ft) of 250 MHz, making it suitable for signal amplification and switching applications within industrial, commercial, and consumer electronics sectors.

Thermal operating limits range from a minimum of -55°C to a maximum of 150°C, ensuring wide temperature tolerance in demanding environments. The isolated transistor configuration with NPN polarity enables broad compatibility in amplifier and driver circuits.

Physical dimensions include a length of 10 mm, width of 6.2 mm, and height of 1 mm, facilitating compact layout designs. Electrical characteristics such as maximum collector base voltage of 60 V and maximum emitter base voltage of 6 V further support durability and performance reliability.

Maximum collector current: 200 mA. Maximum collector-emitter voltage: 40 V. Maximum power dissipation: 1 W. Minimum DC current gain: 30. Maximum transition frequency: 250 MHz. Package: 16-pin SOIC surface mount. Operating temperature range: -55°C to 150°C.

Transistor polarity: NPN.

This transistor is ideal for various industrial and commercial electronic designs, including signal amplification, switching circuits, and other discrete semiconductor applications. Its robust specifications and reliable packaging support effective use in demanding power and control applications.

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