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onsemi Small Signal NPN Transistor 800 mA, 50 V, TO-92 Package BC33725TAR

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.77mm
Length 5.2mm
Model BC33725TAR
Width 4.19mm
Mount Type Through Hole
Series BC337
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature 0°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 10V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc 800mA
Transistor Configuration Single
Maximum Transition Frequency ft 50MHz

Key Features

  • Maximum DC collector current is 800 milliamps.
  • Package type is TO-92 suitable for through-hole mounting.
  • Maximum collector-emitter voltage rating is 50 volts.
  • Minimum DC current gain (hFE) is 60 ensuring effective amplification.
  • Maximum power dissipation is 625 milliwatts.
  • Transistor polarity is NPN configuration for switching and amplification.
  • Operating temperature ranges from 0 to 150 degrees Celsius.
  • Maximum transition frequency is 50 MHz suitable for high-frequency circuits.

Product Description

onsemi BC33725TAR Small Signal NPN Transistor offers a maximum DC collector current of 800 mA and can operate at collector-emitter voltages up to 50 V. It features a compact TO-92 package designed for through-hole mounting, facilitating easy integration into various electronic circuits.

This single transistor configuration is ideal for switching and amplification applications in industrial, laboratory, and commercial electronic devices. Its minimum DC current gain of 60 ensures reliable performance in low to medium power applications.

With a maximum power dissipation of 625 mW and operating temperature range of 0 to 150 °C, it suits environments with moderate thermal conditions. The transistor also boasts a maximum transition frequency of 50 MHz, enabling use in high-frequency signal processing circuits.

The device comes with three pins, simplifying circuit design and installation. Its compact dimensions (21.77 mm height, 5.2 mm length, and 4.19 mm width) contribute to space-saving PCB layouts.

Typical use cases include electronic component design for power amplification, switching circuits, and signal modulation in consumer electronics, industrial controls, and communication equipment.

Maximum DC collector current is 800 milliamps. Package type is TO-92 suitable for through-hole mounting. Maximum collector-emitter voltage rating is 50 volts. Minimum DC current gain (hFE) is 60 ensuring effective amplification.

Maximum power dissipation is 625 milliwatts. Transistor polarity is NPN configuration for switching and amplification. Operating temperature ranges from 0 to 150 degrees Celsius. Maximum transition frequency is 50 MHz suitable for high-frequency circuits.

Pin count is 3 configured in a single transistor layout. Compact dimensions optimize PCB space. Explore more Bipolar Transistors and electronic components on EnvMart for diverse industrial and professional applications.

onsemi Small Signal NPN Transistor 800 mA, 50 V, TO-92 Package BC33725TAR
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Frequently Asked Questions

The maximum DC collector current of this transistor is 800 mA.

The maximum collector-emitter voltage rating is 50 V.

This model comes in a TO-92 package suitable for through-hole mounting.

The minimum DC current gain (hFE) is 60, which ensures effective amplification.

The maximum power dissipation is 625 mW.

The operating temperature range is from 0 to 150 degrees Celsius.

The maximum transition frequency is 50 MHz, making it suitable for high-frequency circuits.

This model has a pin count of 3, configured in a single transistor layout.

The maximum emitter-base voltage (VEBO) is 5 V.

The maximum collector-base voltage (VCBO) is 10 V.

This model uses an NPN configuration for switching and amplification applications.

The BC33725TAR is manufactured in India.

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