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onsemi General Purpose PNP Bipolar Transistor 15W 1.5A 160V 3-Pin TP-FA 2SA1552S-TL-H

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.3mm
Length 9.5mm
Model 2SA1552S-TL-H
Width 6.5mm
Mount Type Surface
Series 2SA1552S
Maximum Operating Temperature 150°C
Package Type TP-FA
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -160V
Minimum DC Current Gain hFE 80
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -180V
Maximum Power Dissipation Pd 15W
Maximum DC Collector Current Idc -1.5A
Transistor Configuration Single
Maximum Transition Frequency ft 120MHz

Key Features

  • This transistor features a maximum DC collector current of 1.5 A.
  • The maximum collector emitter voltage rating is 160 V, suitable for high voltage circuits.
  • It uses a 3-pin TP-FA surface mount package for easy assembly.
  • Designed for a maximum power dissipation of 15 W for efficient thermal management.
  • It has a high current gain (hFE) minimum of 80 for reliable amplification.
  • This transistor is rated for operation between -55°C to 150°C temperatures.
  • The maximum transition frequency is 120 MHz, ensuring fast switching applications.

Product Description

onsemi 2SA1552S-TL-H is a general purpose PNP bipolar transistor designed to handle a maximum DC collector current of 1.5 A and a collector emitter voltage of 160 V. Featuring a 3-pin TP-FA surface mount package type, this transistor supports efficient installation on circuit boards.

It offers power dissipation up to 15 W and a minimum DC current gain of 80, making it suitable for a variety of industrial and electronic applications requiring medium power amplification and switching. The transistor supports operation across a wide temperature range from -55°C to 150°C, ensuring reliable use in harsh environments.

The transistor configuration is single, and it provides a maximum transition frequency of 120 MHz, suitable for moderate frequency applications. Physical dimensions include height of 2.3 mm, length of 9.5 mm, and width of 6.5 mm, fitting standard footprint layouts.

This device does not have specific automotive certification but is widely used in general electronics, power management circuits, and semiconductor applications. It is a robust component well-suited for industrial, manufacturing, and laboratory electronics assembly.

This transistor features a maximum DC collector current of 1.5 A. The maximum collector emitter voltage rating is 160 V, suitable for high voltage circuits. It uses a 3-pin TP-FA surface mount package for easy assembly. Designed for a maximum power dissipation of 15 W for efficient thermal management.

It has a high current gain (hFE) minimum of 80 for reliable amplification. This transistor is rated for operation between -55°C to 150°C temperatures. The maximum transition frequency is 120 MHz, ensuring fast switching applications.

This product is ideal for use in industrial, electronic manufacturing, and power control environments where robust PNP transistors are required. Browse EnvMart’s extensive semiconductor categories to find complementary components and accessories.

Explore more products in our Bipolar Transistors category.

onsemi General Purpose PNP Bipolar Transistor 15W 1.5A 160V 3-Pin TP-FA 2SA1552S-TL-H
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Frequently Asked Questions

The maximum DC collector current of this model is 1.5 A.

This transistor has a maximum collector emitter voltage rating of 160 V.

It is designed for a maximum power dissipation of 15 W.

The minimum DC current gain (hFE) for this model is 80.

This model operates within a temperature range of -55°C to 150°C.

The maximum transition frequency is 120 MHz, making it suitable for moderate frequency applications.

It uses a 3-pin TP-FA surface mount package for easy assembly.

The dimensions are height of 2.3 mm, length of 9.5 mm, and width of 6.5 mm.

The maximum emitter base voltage (VEBO) rating is -6 V.

This transistor is suitable for a variety of industrial and electronic applications requiring medium power amplification and switching.

The transistor configuration is single.

The maximum collector base voltage (VCBO) rating is -180 V.

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