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onsemi Small Signal NPN Transistor 200 mA 50 V 3-Pin SOT-23 MMBT6428LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model MMBT6428LT1G
Width 2.64mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 250
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 60V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 200mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor supports a maximum DC collector current of 200 mA.
  • It operates with a maximum collector emitter voltage of 50 V.
  • The device features a 3-pin SOT-23 package with surface mount technology.
  • It has a minimum DC current gain (hFE) of 250 for efficient signal amplification.
  • The maximum power dissipation is 225 mW, suitable for small signal uses.
  • Operating temperature range spans from -55°C to 150°C, providing versatility in applications.
  • The maximum transition frequency is 100 MHz, supporting high frequency operations.
  • The transistor polarity is NPN and the configuration is single.

Product Description

onsemi MMBT6428LT1G is a small signal NPN transistor designed primarily for low power switching and amplification in various electronic circuits. The device is housed in a compact 3-pin SOT-23 surface mount package, making it suitable for dense PCB applications in consumer electronics, industrial instrumentation, and communication equipment.

The transistor supports a maximum DC collector current of 200 mA and a collector emitter voltage of up to 50 V, enabling it to operate efficiently in low power signal amplification and switching roles. It assures a minimum DC current gain (hFE) of 250, ensuring effective signal integrity and gain. The device has a maximum power dissipation of 225 mW, suitable for circuits with moderate thermal requirements.

Its operational temperature range from -55°C to 150°C allows deployment in a broad array of environments including industrial, automotive, and commercial settings, although it is not automotive qualified. With a maximum transition frequency of 100 MHz, this transistor supports applications requiring high frequency operation such as mixers and oscillators.

The small size with 3.04 mm length, 2.64 mm width, and 1.11 mm height facilitates compact board layouts. The maximum collector base voltage is rated at 60 V dc and maximum emitter base voltage is 6 V. This device is optimized for surface mounting, improving manufacturing throughput.

This transistor is vital for signal amplification and switching in electronic circuits. Its small SOT-23 package saves PCB real estate in compact electronic devices. Designed for industrial, consumer electronics, and communication applications.

Typical uses include signal amplification, switching, and high frequency operations up to 100 MHz. Not suitable for automotive applications due to lack of automotive qualification.

For engineers and designers, the onsemi MMBT6428LT1G provides a reliable and compact solution for low power transistor needs. It belongs in any catalog section dedicated to bipolar transistors and discrete semiconductors, ensuring ease of sourcing for electronic manufacturing and repair.

Explore related transistor solutions and electronics components in the Bipolar Transistors category on EnvMart for diverse industrial, laboratory, and commercial applications.

onsemi Small Signal NPN Transistor 200 mA 50 V 3-Pin SOT-23 MMBT6428LT1G
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Frequently Asked Questions

The maximum DC collector current for this model is 200 mA.

It operates with a maximum collector-emitter voltage of 50 V.

The minimum DC current gain (hFE) is 250, which supports effective signal amplification.

The maximum power dissipation is 225 mW, suitable for small signal applications.

The operating temperature range spans from -55°C to 150°C.

The maximum transition frequency is 100 MHz, allowing for high frequency operations.

This transistor is housed in a 3-pin SOT-23 surface mount package.

The dimensions are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

The maximum emitter-base voltage is 6 V.

This model is not suitable for automotive applications due to the lack of automotive qualification.

It features a single transistor configuration.

The country of origin for this transistor is India.

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