onsemi 7 Darlington Transistor NPN, 500 mA Continuous Collector Current, 50 V Collector Emitter Voltage, 16-Pin MC1413BDR2G

onsemi MC1413BDR2G is a 7 Darlington NPN transistor designed for power amplification and switching applications. Housed in a compact 16-Pin SOIC surface mount package, it supports continuous collector currents up to 500 mA and a maximum collector emitter voltage of 50 V.

This component features a high minimum DC current gain (hFE) of 1000, providing substantial signal amplification while maintaining low saturation voltage of 1.6 V. The transistor polarity is NPN, making it suitable for various electronic circuit designs.

Its operating temperature range from -40°C to 85°C enables stable performance even in harsh industrial environments. The package’s small size with dimensions of 10 mm length and 1.5 mm height supports dense PCB layouts and space-saving designs.

The MC1413BDR2G’s 7-element configuration allows integration of multiple Darlington transistor pairs on a single chip, enhancing efficiency and reducing component count in complex circuits.

This device is widely used in industrial electronics, instrumentation, power regulation, and signal processing circuits, offering reliable performance for a variety of power electronic applications.

High DC gain of 1000 ensures strong amplification. Surface mount SOIC 16-pin package facilitates automated assembly. Wide temperature tolerance suitable for industrial use. Compact size supports high-density PCB designs.

Multiple Darlington pairs per chip optimize circuit design. Explore more high-quality discrete semiconductors and Darlington Transistors for your electronics projects on EnvMart's comprehensive Electronics & Electricals category.