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Infineon HEXFET N-Channel MOSFET 110A Continuous Drain Current 55V Max Drain-Source Voltage 3-Pin TO-247 IRFP064NPBF
Specifications
| Country of Origin | Mexico |
|---|---|
| Brand | Infineon |
| Height | 20.3mm |
| Length | 15.9mm |
| Model | IRFP064NPBF |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 110A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 170nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC Infineon IRFP064NPBFBrand | Infineon |
Key Features
- High-performance HEXFET series MOSFET designed for efficient power management.
- Low on-resistance of 8mΩ improves efficiency and reduces power loss.
- Maximum power dissipation rated at 200W for robust operation.
- Can operate at temperatures ranging from -55°C to +175°C for demanding conditions.
- Supports gate-source voltages between -20V and +20V for versatile control.
- Through-hole mounting with TO-247 package for straightforward installation.
- Ideal for power supply circuits, motor control, telecom, and industrial power conversion.
Product Description
Infineon IRFP064NPBF HEXFET N-Channel MOSFET is a high-performance semiconductor device optimized for power management in a variety of industrial, electronic, and electrical applications. It features a maximum continuous drain current of 110A and a maximum drain-source voltage of 55V, packaged in a robust 3-Pin TO-247 package with through-hole mounting type. The device's enhancement mode design ensures reliable switching and efficient operation.
This MOSFET exhibits a low on-resistance of 8mΩ, which minimizes conduction losses and enhances overall efficiency. It supports gate-source voltages from -20V to +20V, enabling flexible control options. Furthermore, with a maximum power dissipation of 200W and an operating temperature range from -55°C to +175°C, the IRFP064NPBF is suitable for demanding industrial environments.
Applications include power supply circuits requiring high efficiency, motor control systems for automation, telecommunications equipment, and industrial power conversion systems. The TO-247 package facilitates through-hole installation, offering durability and ease of integration.
High continuous drain current capability supports robust power applications. Low Rds(on) reduces energy losses and device heating. Wide gate voltage range for enhanced control flexibility. Designed for use in power supply, telecom, and automation industries.
Temperature tolerance ensures reliable operation in harsh environments. Through-hole TO-247 package for secure mounting. Compatible with various industrial electronic systems requiring efficient switching elements.
This Infineon MOSFET is engineered to meet the rigorous demands of power management in modern electronic systems. Its combination of high current capacity, voltage rating, and temperature resilience make it an essential component for designers and engineers working on power electronics and motor control solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 110A.
The maximum drain-source voltage for this unit is 55V.
This MOSFET features a low on-resistance of 8mΩ, which helps improve efficiency and reduce power loss.
The maximum power dissipation rated for this MOSFET is 200W, allowing for robust operation in various applications.
This model can operate within a temperature range of -55°C to +175°C, making it suitable for demanding conditions.
The TO-247 package supports through-hole mounting, facilitating straightforward installation.
It supports gate-source voltages between -20V and +20V, providing versatile control options.
The dimensions of this MOSFET are 20.3mm in height, 15.9mm in length, and 5.3mm in width.
This MOSFET is suitable for power supply circuits, motor control systems, telecommunications equipment, and industrial power conversion.
The IRFP064NPBF has a pin count of 3, which is typical for its TO-247 package.
This model features an N-channel design, which is common for enhancement mode MOSFETs.
The country of origin for this MOSFET is Mexico.
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