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ROHM NPN Bipolar Power Transistor 80 V 5 A TO-263AB Surface Mount 3-Pin 2SCR586JGTLL
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 4.7mm |
| Length | 10.4mm |
| Model | 2SCR586JGTLL |
| Width | 15.4mm |
| Mount Type | Surface |
| Series | 2SCR586JG |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263AB |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Minimum DC Current Gain hFE | 120 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 80V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 40W |
| Maximum DC Collector Current Idc | 5A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 200MHz |
Key Features
- Maximum collector-emitter voltage of 80 V ensures reliability in medium power applications.
- Collector current rating up to 5 A suitable for power driver circuits.
- Surface mount TO-263AB package with 3 pins for compact PCB design.
- Power dissipation capacity of 40 W allowing efficient thermal management.
- High DC current gain hFE minimum of 120 for effective amplification.
- Operational temperature range from -55°C to 150°C for diverse environments.
- Maximum transition frequency of 200 MHz enabling good high-frequency performance.
- Automotive grade with AEC-Q101 standard compliance.
Product Description
ROHM 2SCR586JGTLL is a robust NPN bipolar power transistor designed for medium power applications. It features a maximum collector-emitter voltage of 80 V and supports a collector current of up to 5 A, making it suitable for various power driver circuits and low frequency amplifier applications in electronic equipment.
This transistor is housed in a TO-263AB surface mount package with a compact 3-pin configuration, facilitating easy PCB integration and space-saving designs. With a power dissipation rating of 40 W, it efficiently handles thermal stress during operation.
The device guarantees a minimum DC current gain (hFE) of 120, ensuring effective signal amplification. It supports a wide operational temperature range from -55°C to 150°C, enabling reliability in both industrial and automotive environments.
The maximum transition frequency of 200 MHz delivers good performance in circuits requiring moderate switching speeds. Additionally, the 2SCR586JGTLL meets the AEC-Q101 automotive standard, endorsing its suitability for automotive electronics.
Maximum collector-emitter voltage of 80 V ensures reliability in medium power applications. Collector current rating up to 5 A suitable for power driver circuits. Surface mount TO-263AB package with 3 pins for compact PCB design.
Power dissipation capacity of 40 W allowing efficient thermal management. High DC current gain hFE minimum of 120 for effective amplification. Operational temperature range from -55°C to 150°C for diverse environments. Maximum transition frequency of 200 MHz enabling good high-frequency performance.
Automotive grade with AEC-Q101 standard compliance.
This transistor is ideal for use in industrial electronics, automotive control systems, power management modules, and other applications requiring reliable power switching and amplification. Its surface mount package allows for automated assembly, improving production efficiency.
Explore more Power Transistors and related semiconductor components at EnvMart for your industrial and electronic design needs.
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Frequently Asked Questions
The maximum collector-emitter voltage of this model is 80 V, ensuring reliability in medium power applications.
It supports a collector current rating of up to 5 A, making it suitable for power driver circuits.
The power dissipation capacity is rated at 40 W, allowing for efficient thermal management during operation.
This transistor operates within a temperature range of -55°C to 150°C, making it suitable for diverse environments.
It has a minimum DC current gain (hFE) of 120, which ensures effective amplification.
It is housed in a TO-263AB surface mount package with a compact 3-pin configuration for easy PCB integration.
The maximum transition frequency is 200 MHz, enabling good performance in circuits requiring moderate switching speeds.
Yes, it meets the AEC-Q101 automotive standard, endorsing its suitability for automotive electronics.
The dimensions are 10.4 mm in length, 15.4 mm in width, and 4.7 mm in height.
It is an NPN bipolar power transistor, designed for medium power applications.
The maximum emitter-base voltage (VEBO) is 6 V.
The maximum collector-base voltage (VCBO) is 80 V.
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