Nexperia Bipolar PNP Transistor BC860B,215, -100 mA, -45 V, 3-Pin SOT-23 BC860B,215

The Nexperia BC860B,215 is a high performance bipolar PNP transistor designed for diverse electronics and electrical engineering applications requiring reliable switching and amplification. Packaged in a compact SOT-23 3-pin surface mount device, it offers ease of mounting on printed circuit boards where space saving is critical.

This transistor features a maximum DC collector current of -100 mA and a collector-emitter voltage of -45 V, making it ideal for low to moderate power circuits. The device supports a minimum DC current gain (hFE) of 220, ensuring effective signal amplification in various electronic systems.

With a power dissipation of 250 mW, the transistor can operate continuously within specified thermal conditions without risk of damage.

Designed for robust operation, the BC860B,215 can function reliably within an operating temperature range from -65°C to 150°C, supporting demanding industrial, automotive, and commercial electronic uses.

The small form factor with dimensions 3 mm by 2.5 mm by 1.1 mm allows implementation in compact assemblies, robotics, power management, signal processing, and other semiconductor needs requiring PNP transistor functionality.

This device complies with RoHS environmental standards, ensuring reduced lead and hazardous substance content, suitable for applications emphasizing sustainability and regulatory compliance.

It is manufactured in China and distributed as a new product to guarantee quality and performance to engineers, product designers, and technicians. This bipolar transistor is designed with a 3-pin SOT-23 surface mount package for convenient PCB integration.

Maximum DC collector current rating is -100 mA, suitable for low power switching applications. Collector-emitter voltage rating is -45 V, allowing reliable operation in moderate voltage circuits. The device offers a minimum DC current gain (hFE) of 220 which ensures good amplification efficiency.

Maximum power dissipation stands at 250 mW, enabling sustained operation within thermal limits. Operating temperature range extends from -65°C to 150°C, suitable for a wide industrial environment. The transistor polarity is PNP and it is configured as a single transistor for general purpose use.

Complies with RoHS standards, ensuring environmental safety and compliance. Dimensions are small with 3 mm length, 2.5 mm width and 1.1 mm height, facilitating compact designs. Manufactured in China with guaranteed new condition ensuring reliability and quality.

Ideal for applications in industrial electronics, power management, instrumentation, and general semiconductor circuits, the Nexperia BC860B,215 transistor provides efficient switching and amplification capabilities. Engineers can rely on this device for performance and compliance in a broad range of design requirements.

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