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onsemi Digital Transistor 230 V NPN Through Hole TO-247, 3-Pin MJW3281AG
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 21.08mm |
| Length | 16.26mm |
| Model | MJW3281AG |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 230V |
| Minimum DC Current Gain hFE | 12 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Maximum Collector Base Voltage VCBO | 230V |
| Maximum Power Dissipation Pd | 200W |
| Transistor Configuration | Single |
Key Features
- Maximum collector emitter voltage is 230 V ensuring high voltage operation.
- Supports maximum power dissipation up to 200 W for demanding power requirements.
- Minimum DC current gain (hFE) of 12 for efficient amplification.
- High gain linearity from 100 mA to 7 A with hFE minimum 45 at 8 A collector current.
- Maximum operating temperature of 150°C for reliability in harsh environments.
- Through hole mount type for durable PCB installation.
- Designed as a single transistor configuration with NPN polarity.
- Suitable for audio frequency applications including disk head positioners and general linear use.
Product Description
onsemi MJW3281AG digital transistor is a sturdy NPN transistor designed for high power audio applications, disk head positioners, and other linear electronic systems requiring a reliable power transistor capable of handling 230 V maximum collector emitter voltage. It comes in a TO-247 package with through hole mounting and three pins, making it suitable for robust PCB assembly.
This transistor offers a high maximum power dissipation rating of 200 W, enabling it to perform efficiently in demanding power conditions. The device features a minimum DC current gain of 12 and exceptional gain linearity from 100 mA up to 7 A with hFE minimum 45 at an 8 A collector current, ensuring excellent audio frequency performance with low harmonic distortion.
The MJW3281AG is built to withstand maximum operating temperatures up to 150°C, making it reliable for use in harsh environments. Its compact form factor, measuring 16.26 mm in length, 21.08 mm in height, and 5.3 mm in width, fits well in various electronic equipment requiring power transistors.
With a through hole package type and single transistor configuration, it offers easy installation and durability. Though it lacks specific automotive standards, it is suitable for commercial and industrial electronic design projects. The component is manufactured in China, ensuring quality and reliability consistent with international standards.
Maximum collector emitter voltage of 230 V. Maximum power dissipation of 200 W. Minimum DC current gain of 12. Gain linearity from 100 mA to 7 A with hFE minimum 45. Maximum operating temperature of 150°C. Compact dimensions with TO-247 package.
Through hole mounting type. Single transistor configuration with NPN polarity.
This transistor is ideal for industrial, electronic manufacturing, audio equipment, and other laboratory and electrical engineering applications. Browse more Digital Transistors and semiconductors in the EnvMart catalog for comprehensive electronic component solutions.
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Frequently Asked Questions
The maximum collector emitter voltage of this model is 230 V, allowing for high voltage operation.
It supports a maximum power dissipation of 200 W, making it suitable for demanding power requirements.
The minimum DC current gain (hFE) is 12, which ensures efficient amplification.
This model measures 16.26 mm in length, 21.08 mm in height, and 5.3 mm in width.
The maximum operating temperature is 150°C, allowing for reliable performance in harsh environments.
It features a through hole mounting type, which provides durable PCB installation.
This model is designed as a single transistor configuration with NPN polarity.
It offers high gain linearity from 100 mA to 7 A, with a minimum hFE of 45 at an 8 A collector current.
It is suitable for audio frequency applications, disk head positioners, and general linear use in electronic systems.
The maximum emitter base voltage (VEBO) is 5 V DC.
The maximum collector base voltage (VCBO) is also 230 V.
This transistor is manufactured in China, ensuring quality and reliability consistent with international standards.
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