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onsemi Digital PNP Darlington Power Transistor 150W 200V Vceo Through Hole SOT-93 3-Pin MJH11019G

Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 20.35mm
Length 15.2mm
Model MJH11019G
Width 4.9mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type SOT-93
Pin Count 3
Maximum Collector Emitter Voltage Vceo -200V
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V dc
Maximum Collector Base Voltage VCBO 150V
Maximum Power Dissipation Pd 150W
Transistor Configuration Single

Key Features

  • This transistor supports a maximum collector emitter voltage of 200V.
  • It delivers a high power dissipation rating of 150W for robust performance.
  • Constructed in a through-hole SOT-93 package with 3 pins for easy mounting.
  • Features a minimum DC current gain (hFE) of 100, ensuring amplification efficiency.
  • The transistor operates reliably up to 150°C maximum temperature.
  • Includes a maximum collector base voltage of 150V and emitter base voltage of 5V dc.
  • Suitable for motor control and low frequency switching in industrial and electronic equipment.
  • Manufactured in China with monolithic construction and Pb-free package.

Product Description

onsemi MJH11019G is a digital PNP Darlington bipolar power transistor engineered to provide high gain and power dissipation for industrial and electronic applications. This device supports a maximum collector emitter voltage (Vceo) of 200 volts and features a high power dissipation capacity of 150 watts, making it ideal for general purpose amplification, low frequency switching, and motor control applications.

The transistor is housed in a through-hole SOT-93 package with a 3-pin configuration for ease of installation on printed circuit boards. It assures reliable operation with a typical high DC current gain (hFE) of at least 100, and an operating temperature range up to 150°C. Additionally, the device offers a maximum collector base voltage of 150 volts and a maximum emitter base voltage of 5 volts DC.

Its compact form factor with dimensions of 15.2 mm length, 20.35 mm height, and 4.9 mm width allows integration into various electronic assemblies and motor control circuitry. The MJH11019G complements other onsemi devices in its series and meets standard industrial requirements for bipolar power transistors, without specific automotive approvals.

The transistor's monolithic construction and Pb-free packaging align with environmental standards. Designed and manufactured in China, it provides robust performance for users needing a dependable PNP Darlington transistor in power electronics, motor drivers, and signal amplification circuits.

This transistor supports a maximum collector emitter voltage of 200V. It delivers a high power dissipation rating of 150W for robust performance. Constructed in a through-hole SOT-93 package with 3 pins for easy mounting.

Features a minimum DC current gain (hFE) of 100, ensuring amplification efficiency. The transistor operates reliably up to 150°C maximum temperature. Includes a maximum collector base voltage of 150V and emitter base voltage of 5V dc.

Compact dimensions: Length 15.2mm, Height 20.35mm, Width 4.9mm. Suitable for motor control and low frequency switching in industrial and electronic equipment. Manufactured in China with monolithic construction and Pb-free package.

Explore more on bipolar transistors and related semiconductor solutions on EnvMart.

Explore more products in our Digital Transistor category.

onsemi Digital PNP Darlington Power Transistor 150W 200V Vceo Through Hole SOT-93 3-Pin MJH11019G
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for this transistor is 200V.

This model has a high power dissipation rating of 150W.

The transistor has dimensions of 15.2 mm in length, 20.35 mm in height, and 4.9 mm in width.

It features a 3-pin configuration and is designed for through-hole mounting.

The minimum DC current gain (hFE) is 100, ensuring effective amplification.

The maximum operating temperature for this transistor is 150°C.

The maximum collector base voltage (VCBO) is 150V.

This transistor is suitable for motor control and low frequency switching in industrial and electronic equipment.

The maximum emitter base voltage (VEBO) is 5V DC.

This transistor is manufactured in China.

It is constructed in a through-hole SOT-93 package.

The transistor configuration is single, designed for PNP applications.

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