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| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 15.75mm |
| Length | 10.53mm |
| Model | 2N6487G |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | 2N6487 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V dc |
| Minimum DC Current Gain hFE | 20 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Maximum Collector Base Voltage VCBO | 70V dc |
| Maximum Power Dissipation Pd | 75W |
| Maximum DC Collector Current Idc | 15A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1kHz |
onsemi 2N6487G bipolar power transistor is a high current NPN device rated at 15 amperes collector current and 60 volts dc collector-emitter voltage. Packaged in a durable TO-220 form factor with three pins for through-hole mounting, this transistor is well suited for general-purpose amplification and switching applications across industries.
The device operates reliably over a wide temperature range from -65°C to 150°C, making it ideal for various industrial environments. Its maximum power dissipation is rated at 75 watts, providing strong thermal handling for demanding circuits.
This transistor offers a minimum DC current gain (hFE) of 20, with typical values reaching up to 150 at moderate current levels, ensuring effective signal amplification. The minimum transition frequency of 1 kHz supports usage in low to mid-frequency electronic applications.
The 2N6487G is part of a complementary series including NPN and PNP variants, enabling flexible circuit design. Its single transistor configuration and through-hole mount type facilitate easy integration into printed circuit boards.
Manufactured in China, this RoHS-compliant component adheres to environmental safety standards, and lead-free packaging options are available. It is ideal for use in electronics, industrial automation, power management, and general electrical engineering tasks.
Supports maximum collector current of 15 amperes for high power applications. Collector-emitter voltage rating of 60 volts dc ensures suitability for medium voltage circuits. TO-220 compact package facilitates easy mounting and thermal management.
NPN transistor type designed for general-purpose amplifier and switching tasks. Operates reliably within temperature range from -65°C to 150°C. Power dissipation rated at 75 watts to handle substantial load without damage.
Single transistor configuration with 3 pins suitable for through-hole PCB mounting. High current gain hFE ranging 20 - 150 at 5 A collector current ensures efficient amplification. Minimum transition frequency of 1 kHz meets typical signal requirements.
Manufactured in China with RoHS compliant lead-free packaging options.
Explore more power transistors and Bipolar Transistors in our Electronics & Electricals category at EnvMart to find a wide selection of semiconductors suitable for diverse industrial and electronic applications.
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