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onsemi Digital Transistor, NPN, 80 V dc, 36 W Power Dissipation, TO-225 Through Hole, 3-Pin BD441G

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onsemi Digital Transistor, NPN, 80 V dc, 36 W Power Dissipation, TO-225 Through Hole, 3-Pin BD441G

Name: onsemi Digital Transistor, NPN, 80 V dc, 36 W Power Dissipation, TO-225 Through Hole, 3-Pin BD441G
Brand: onsemi
SKU: 258492
Price: 0.53 USD
Availability: InStock

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Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	11.1mm
Length	7.8mm
Model	BD441G
Width	3mm
Mount Type	Through Hole
Series	BD441
Maximum Operating Temperature	150°C
Package Type	TO-225
Pin Count	3
Maximum Collector Emitter Voltage Vceo	80V dc
Minimum DC Current Gain hFE	40
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V dc
Maximum Collector Base Voltage VCBO	80V dc
Maximum Power Dissipation Pd	36W
Transistor Configuration	Single

Key Features

Maximum collector emitter voltage of 80 V dc ensures reliable operation in medium power circuits.
Maximum power dissipation rating is 36 W for sustained performance under load.
Minimum DC current gain (hFE) of 40 provides adequate amplification.
Standard TO-225 package with through hole mounting facilitates easy integration.
Maximum operating temperature of 150°C allows for use in demanding environments.
Three-pin configuration optimized for single transistor applications.
Compact dimensions of 7.8mm length, 11.1mm height, and 3mm width provide space efficiency.
Complementary types include BD438 and BD442 for design flexibility.

Product Description

The onsemi BD441G Digital Transistor is a high-quality NPN bipolar transistor designed for medium power digital amplifier and switching applications. Packaged in TO-225 through hole format, it facilitates easy mounting on printed circuit boards.

It features a maximum collector emitter voltage (Vceo) of 80 V dc, making it suitable for circuits requiring robust voltage handling capabilities. The maximum power dissipation of 36 W supports reliable operation under considerable load.

With a minimum DC current gain (hFE) of 40, the BD441G provides sufficient amplification for various electronic circuits. The maximum emitter base voltage is 5 V dc and the maximum collector base voltage (VCBO) also stands at 80 V dc, allowing for stable transistor operation.

This transistor operates reliably up to 150°C, suitable for industrial and power applications demanding high temperature endurance. Its compact physical dimensions of 7.8 mm length, 11.1 mm height, and 3 mm width ensure space-efficient use in electronic assemblies.

The device's three-pin single transistor configuration supports straightforward circuit design and implementation. It complements related transistor types BD438 and BD442, expanding options for circuit designers.

The plastic medium-power construction ensures durability and performance consistency. This product originates from China and complies with Pb-free environmental packaging standards, reflecting environmentally responsible manufacturing.

High voltage rating of 80 V dc collector emitter voltage. Rated power dissipation of 36 W for medium power circuits. Through hole mount TO-225 package for robust installation. Temperature rating up to 150°C for industrial applications.

Three-pin NPN transistor configuration. Compact physical dimensions for space-saving circuits. Complementary models BD438 and BD442 for versatile designs. Pb-free packaging complying with environmental standards.

This transistor is widely applicable in industrial, commercial, and automotive electronic manufacturing, power amplification, control circuits, and switching devices. EnvMart offers this reliable semiconductor component to support advanced electronic system builds.

Explore more Digital Transistors and semiconductor devices on EnvMart to find the perfect components for your electronic designs.

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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) of the BD441G is 80 V dc, making it suitable for circuits that require robust voltage handling capabilities.

This model has a maximum power dissipation rating of 36 W, which supports reliable operation under considerable load.

The dimensions of the BD441G are 7.8 mm in length, 11.1 mm in height, and 3 mm in width, ensuring space efficiency in electronic assemblies.

The BD441G can operate reliably at temperatures up to 150°C, making it suitable for demanding industrial applications.

This transistor is packaged in a TO-225 format and utilizes through hole mounting, facilitating easy integration onto printed circuit boards.

The minimum DC current gain (hFE) of the BD441G is 40, providing adequate amplification for various electronic circuits.

This model features a three-pin configuration optimized for single transistor applications, simplifying circuit design and implementation.

The maximum collector base voltage (VCBO) is 80 V dc, and the maximum emitter base voltage (VEBO) is 5 V dc, allowing for stable operation.

Complementary types for the BD441G include the BD438 and BD442, providing design flexibility for circuit designers.

This transistor originates from China and complies with Pb-free environmental packaging standards, reflecting environmentally responsible manufacturing.

It is widely applicable in industrial, commercial, and automotive electronic manufacturing, power amplification, control circuits, and switching devices.