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onsemi Digital Transistor Dual NPN + PNP 50 V Surface Mount SOT-363 (SC-88) 6-Pin UMZ1NT1G

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onsemi Digital Transistor Dual NPN + PNP 50 V Surface Mount SOT-363 (SC-88) 6-Pin UMZ1NT1G

Name: onsemi Digital Transistor Dual NPN + PNP 50 V Surface Mount SOT-363 (SC-88) 6-Pin UMZ1NT1G
Brand: onsemi
SKU: 258473
Price: 0.05 USD
Availability: InStock

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Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.1mm
Length	2.2mm
Model	UMZ1NT1G
Width	2.2mm
Mount Type	Surface
Series	UMZ1NT1G
Maximum Operating Temperature	150°C
Package Type	SOT-363 (SC-88)
Pin Count	6
Maximum Collector Emitter Voltage Vceo	50V
Minimum DC Current Gain hFE	200
Transistor Polarity	NPN + PNP
Maximum Emitter Base Voltage VEBO	7V dc
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	385mW
Transistor Configuration	Dual

Key Features

Compatible with low power surface mount applications requiring dual transistor functions.
Maximum collector emitter voltage rating of 50 V for reliable operation.
Maximum power dissipation of 385 mW to handle moderate power levels.
Minimum DC current gain (hFE) of 200 ensures efficient signal amplification.
6-pin SOT-363 (SC-88) package allows for compact PCB footprint.
Maximum emitter base voltage (VEBO) of 7 V DC to protect against overvoltage.
Operating temperature up to 150°C supports demanding environments.
Compliant with automotive standard AEC-Q101 ensuring automotive-grade quality.

Product Description

onsemi UMZ1NT1G is a digital transistor featuring a dual NPN + PNP bipolar transistor configuration designed primarily for general purpose amplifier applications. It is housed in a compact SOT-363 (SC-88) 6-pin surface mount package optimized for low power electronic circuits.

The transistor supports a maximum collector emitter voltage (Vceo) of 50 V and maximum power dissipation of 385 mW, suitable for a range of signal switching and amplification tasks.

Minimum DC current gain (hFE) is 200, which ensures good amplification efficiency. The maximum emitter base voltage (VEBO) rating of 7 V DC protects transistor junctions against damage during operation.

The device operates reliably at temperatures up to 150°C and complies with the automotive standard AEC-Q101, making it suitable for automotive and industrial applications. Its small footprint of 2.2 mm length, 2.2 mm width, and 1.1 mm height allows engineers to design compact PCB layouts.

Compatible with low power surface mount applications requiring dual transistor functions. Maximum collector emitter voltage rating of 50 V for reliable operation. Maximum power dissipation of 385 mW to handle moderate power levels.

Minimum DC current gain (hFE) of 200 ensures efficient signal amplification. 6-pin SOT-363 (SC-88) package allows for compact PCB footprint. Maximum emitter base voltage (VEBO) of 7 V DC to protect against overvoltage. Operating temperature up to 150°C supports demanding environments.

Compliant with automotive standard AEC-Q101 ensuring automotive-grade quality. Dimensions approximately 2.2 mm x 2.2 mm x 1.1 mm for small form factor integration. Pb-free option available to meet environmental regulations.

This transistor is widely used in electronic equipment manufacturing, automotive electronics, industrial controls, and various amplifier circuit applications. Discover more Digital Transistor products and onsemi components at EnvMart for reliable semiconductor solutions.

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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) rating for this model is 50 V, ensuring reliable operation in various applications.

This transistor can handle a maximum power dissipation of 385 mW, making it suitable for moderate power levels.

The minimum DC current gain (hFE) for this model is 200, which ensures efficient signal amplification.

The dimensions of the SOT-363 (SC-88) package are approximately 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height.

This transistor operates reliably at temperatures up to 150°C, suitable for demanding environments.

It features a dual NPN + PNP bipolar transistor configuration, designed for general purpose amplifier applications.

Yes, it complies with the automotive standard AEC-Q101, ensuring automotive-grade quality.

The maximum emitter base voltage (VEBO) rating for this model is 7 V DC, which protects against overvoltage.

This model is suitable for low power surface mount applications requiring dual transistor functions, including automotive electronics and industrial controls.

The SOT-363 package has 6 pins, allowing for compact PCB layouts.

The country of origin for the UMZ1NT1G is India.