onsemi Digital Transistor PNP Surface Mount -50 V, 100 mA, 310 mW, 3-Pin MUN5135T1G

onsemi MUN5135T1G Digital Transistor is a PNP surface mount semiconductor designed for use in electronic circuits requiring integrated bias resistors, reducing board space and component count. With a maximum collector emitter voltage of -50 V and continuous collector current rating of 100 mA, this digital transistor operates efficiently within demanding applications.

The monolithic bias network includes a series base resistor and base-emitter resistor, simplifying circuit design by eliminating the need for external resistors. This design reduces system cost and enhances board layout flexibility.

This device supports a maximum power dissipation of 310 mW and features a minimum DC current gain of 80, providing robust amplification capabilities. The maximum collector emitter saturation voltage of 0.25 V aids in switching performance, making it suitable for various industrial and automotive electronic circuits.

The MUN5135T1G transistor measures 2.2 mm in length, 2.4 mm in width, and 1.1 mm in height, with a three-pin configuration for easy surface mounting. It meets Pb-Free and RoHS environmental standards and complies with the automotive industry AEC-Q101 standard, ensuring high reliability under harsh conditions and elevated temperatures up to 150°C.

This digital transistor is ideal for industrial automation, automotive electronics, consumer devices, and other applications requiring compact, efficient PNP transistors. Its integrated bias network aids in reducing circuit complexity and enhancing overall system performance.

This digital transistor integrates two resistors in a monolithic bias network to simplify circuit design. The device supports a maximum power dissipation of 310 mW. It is designed with a single transistor configuration and three pins for compactness.

The transistor exhibits a minimum DC current gain (hFE) of 80. Maximum collector emitter saturation voltage is 0.25 V, ensuring efficient switching. The device is Pb-Free and RoHS compliant, meeting environmental standards.

It supports an automotive standard of AEC-Q101 for reliability in automotive applications. Its maximum operating temperature is 150°C, suitable for high temperature environments. The transistor dimensions are 2.2 mm length, 2.4 mm width, and 1.1 mm height for space-efficient mounting.

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