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onsemi Digital Transistor 50 V NPN 100 mA Surface Mount SC-59 3-Pin MSC2712GT1G

Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.3mm
Length 3.1mm
Model MSC2712GT1G
Width 1.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SC-59
Standards/Approvals RoHS
Pin Count 3
Maximum Continuous Collector Current Ic 100mA
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V dc
Maximum Collector Emitter Saturation Voltage VceSAT 0.5V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 200mW
Transistor Configuration Single
Moisture Sensitivity Level 1
ESD Rating TBD

Key Features

  • Maximum collector emitter voltage of 50 V ensures operation under high voltage conditions.
  • Maximum continuous collector current of 100 mA allows efficient current handling.
  • Surface mount design with SC-59 package supports compact circuit board assembly.
  • Three-pin layout facilitates easy integration in electronic circuits.
  • Minimum DC current gain (hFE) of 200 provides strong amplification.
  • Maximum power dissipation rating of 200 mW supports moderate power applications.
  • Maximum operating temperature of 150°C ensures reliability in high thermal environments.
  • RoHS compliant, supporting environmental safety requirements.

Product Description

onsemi MSC2712GT1G Digital Transistor is an NPN bipolar transistor optimized for linear and switching applications in industrial and electronic equipment.

Housed in a compact SC-59 surface mount package, this transistor supports efficient assembly and space savings on printed circuit boards. It features a maximum collector emitter voltage rating of 50 V and can continuously conduct a collector current of up to 100 mA, suitable for moderate power signal amplification tasks.

The device operates reliably up to 150°C maximum junction temperature, with a minimum DC current gain of 200 providing strong signal amplification. Its maximum power dissipation of 200 mW ensures safe operation within moderate power levels.

The transistor's package dimensions are 3.1 mm length, 1.7 mm width, and 1.3 mm height, making it ideal for compact electronic designs. Additional voltage limits include a maximum collector base voltage of 60 V and emitter base voltage of 7 V dc. The transistor exhibits a maximum collector emitter saturation voltage of 0.5 V.

This RoHS compliant Digital Transistor is suitable for various industrial, laboratory, automotive (non-certified), and consumer electronics applications requiring reliable switching elements and signal amplification.

Maximum collector emitter voltage of 50 V. Maximum continuous collector current of 100 mA. Surface mount SC-59 package. Three-pin transistor configuration. Minimum DC current gain (hFE) of 200. Maximum power dissipation of 200 mW.

Operating temperature up to 150°C. Compact dimensions of 3.1 x 1.7 x 1.3 mm. RoHS compliant package. Discover more semiconductor and discrete transistor components at EnvMart for all industrial and electronic design needs.

onsemi Digital Transistor 50 V NPN 100 mA Surface Mount SC-59 3-Pin MSC2712GT1G
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Frequently Asked Questions

The maximum collector emitter voltage of this transistor is 50 V.

This model can continuously conduct a collector current of up to 100 mA.

It is housed in a compact SC-59 surface mount package.

The dimensions of this transistor are 3.1 mm in length, 1.7 mm in width, and 1.3 mm in height.

The minimum DC current gain (hFE) for this model is 200.

The maximum power dissipation rating for this transistor is 200 mW.

It can operate reliably at a maximum temperature of 150°C.

The maximum collector base voltage for this transistor is 60 V.

This model is suitable for various industrial, laboratory, automotive (non-certified), and consumer electronics applications requiring reliable switching elements and signal amplification.

The moisture sensitivity level of this transistor is rated at 1.

The maximum emitter base voltage (VEBO) for this transistor is 7 V dc.

This model has a single transistor configuration.

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