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onsemi Digital Transistor 80 V dc NPN Surface Mount 3-Pin MMBTA06WT1G

Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 2.2mm
Model MMBTA06WT1G
Width 2.4mm
Mount Type Surface
Series MMBTA06W
Maximum Operating Temperature 150°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V dc
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 4V dc
Maximum Collector Base Voltage VCBO 80V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 460mW
Transistor Configuration Single
Moisture Sensitivity Level 1
ESD Rating Human Body Model - 4 kV Machine Model - 400 V

Key Features

  • Housed in a compact SOT-323/SC-70 surface mount package.
  • Maximum collector emitter voltage of 80 V dc.
  • Maximum power dissipation of 460 mW.
  • Minimum DC current gain (hFE) of 100 for reliable amplification.
  • Operates up to 150°C maximum temperature.
  • Certified to AEC-Q101 automotive standard.
  • Three-pin configuration for easy PCB integration.
  • Moisture sensitivity level 1 for manufacturing robustness.

Product Description

onsemi MMBTA06WT1G Digital Transistor is a high quality NPN bipolar transistor designed for general purpose amplifier applications and optimized for low power surface mount technology circuits.

This device is fitted in a compact SOT-323/SC-70 package which measures 2.2 mm in length, 2.4 mm width, and 1 mm height, making it ideal for space-constrained industrial and commercial electronic assemblies.

The transistor offers a maximum collector emitter voltage (Vceo) of 80 V and collector base voltage (Vcbo) of 80 V, with an emitter base voltage (Vebo) up to 4 V dc. It supports a maximum power dissipation of 460 mW to maintain performance under varied electrical loads.

Featuring a minimum DC current gain (hFE) of 100 ensures good amplification efficiency. Its operating temperature range extends to 150°C enabling suitability for demanding ambient conditions.

It carries the AEC-Q101 certification, confirming compliance with automotive quality standards and reliability for vehicle electronics applications. Moisture sensitivity level of 1 further supports robust manufacturing and assembly processes.

The transistor is specifically designed for digital switching and amplification roles in electronic circuits. ESD ratings include 4 kV for Human Body Model and 400 V for Machine Model, providing enhanced electrostatic protection.

Its 3-pin configuration simplifies integration into PCB assemblies focusing on space and power efficiency. Applications span industrial, automotive electronics, consumer devices, and general-purpose electronic projects.

Overall, the onsemi MMBTA06WT1G is a reliable digital transistor solution for engineers requiring a compact, high-quality NPN device with robust electrical and thermal characteristics.

For comprehensive browsing, explore EnvMart categories for Digital Transistors and Bipolar Semiconductor components by onsemi.

onsemi Digital Transistor 80 V dc NPN Surface Mount 3-Pin MMBTA06WT1G
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for the MMBTA06WT1G is 80 V dc.

This model supports a maximum power dissipation of 460 mW.

The minimum DC current gain (hFE) for this transistor is 100, ensuring reliable amplification.

The dimensions of this transistor are 2.2 mm in length, 2.4 mm in width, and 1 mm in height.

The MMBTA06WT1G operates at a maximum temperature of 150°C.

This model is housed in a compact SOT-323/SC-70 surface mount package.

The moisture sensitivity level of the MMBTA06WT1G is rated at level 1, indicating robustness in manufacturing.

This transistor is certified to the AEC-Q101 automotive standard, ensuring quality for automotive applications.

The ESD ratings include 4 kV for the Human Body Model and 400 V for the Machine Model.

This transistor features a 3-pin configuration for easy integration into PCB assemblies.

The MMBTA06WT1G is an NPN bipolar transistor designed for general purpose amplifier applications.

The maximum collector base voltage (Vcbo) is 80 V dc, and the maximum emitter base voltage (Vebo) is 4 V dc.

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