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onsemi NPN Bipolar Transistor, 800 mA Collector Current, 45 V Collector Emitter Voltage, 3-Pin SOT-23 BCW66GLT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 3.04mm
Model BCW66GLT1G
Width 2.64mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 50
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V dc
Maximum Collector Base Voltage VCBO 75V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 800mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum DC collector current of 800 mA.
  • Collector emitter voltage rating of 45 V suitable for a range of low power circuits.
  • Low power dissipation of 300 mW enhances thermal management.
  • Small compact surface mount package type SOT-23 with 3 pins.
  • High maximum transition frequency of 100 MHz ensures fast switching.
  • Automotive grade with AEC-Q101 certification for reliability.
  • Wide operating temperature range from -55°C to 150°C.
  • Minimum DC current gain of 50 ensures effective amplification.

Product Description

onsemi BCW66GLT1G is a high-performance bipolar NPN transistor designed primarily for linear and switching applications in electronic circuits. Encapsulated in a compact 3-pin SOT-23 surface mount package, it offers efficient current handling capabilities with a maximum DC collector current of 800 mA and a collector emitter voltage rating of 45 V.

The transistor supports a maximum power dissipation of 300 mW, allowing reliable operation in low power devices while maintaining thermal stability. Its transition frequency of up to 100 MHz makes it suitable for high-speed switching applications typical in industrial, automotive, and consumer electronics.

This component complies with the automotive industry standard AEC-Q101, ensuring suitability for rigorous environments requiring durability and quality. The device operates consistently across a wide temperature range from -55°C to 150°C, making it viable for harsh industrial and automotive conditions.

The minimum DC current gain (hFE) of 50 ensures reliable amplification in circuits requiring moderate gain levels. The transistor’s 3-pin SOT-23 footprint is a standard surface mount form factor, optimized for compact PCB layouts and automated assembly processes.

800 mA maximum collector current for moderate load applications. 45 V maximum collector emitter voltage supports various low-voltage circuits. Small SOT-23 package for space-saving PCB design. Automotive AEC-Q101 qualification for enhanced reliability.

Wide operating temperature range covering extreme environments. High maximum frequency enables high-speed switching and amplification. Low power dissipation reduces heat accumulation. Single NPN transistor configuration for diverse semiconductor uses.

Compact physical dimensions facilitate dense component placement.

The onsemi BCW66GLT1G transistor is commonly used in industrial control units, automotive electronic systems, consumer electronics, and other applications demanding durable and efficient switching components. Its combination of high frequency, robust current and voltage ratings, automotive standards compliance, and compact package makes it a versatile choice for a broad range of professional electronic designs.

Explore more semiconductor and electronic components like this in the EnvMart Bipolar Transistors category for comprehensive solutions to your circuit design needs.

onsemi NPN Bipolar Transistor, 800 mA Collector Current, 45 V Collector Emitter Voltage, 3-Pin SOT-23 BCW66GLT1G
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Frequently Asked Questions

The maximum DC collector current for this model is 800 mA.

It has a collector-emitter voltage rating of 45 V, suitable for various low-voltage circuits.

This transistor is encapsulated in a compact 3-pin SOT-23 surface mount package.

The maximum power dissipation is 300 mW, allowing for reliable operation in low power devices.

It operates within a wide temperature range from -55°C to 150°C.

The minimum DC current gain (hFE) is 50, ensuring effective amplification in circuits.

The maximum transition frequency is 100 MHz, making it suitable for high-speed switching applications.

It complies with the AEC-Q101 automotive standard, ensuring reliability in automotive applications.

The maximum emitter-base voltage (VEBO) is 5 V DC.

The dimensions are 3.04 mm in length, 2.64 mm in width, and 1.1 mm in height.

It features a single NPN transistor configuration, suitable for diverse semiconductor uses.

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