onsemi 25 A NPN Bipolar Power Transistor, 260 V, 200 W Power Dissipation, 5-Pin TO-264 Package, Through Hole Mount NJL3281DG

onsemi NJL3281DG is a new, high-performance bipolar power transistor designed for audio amplifier and other industrial applications requiring reliable high current and voltage capacity. It is configured as a 25 A NPN transistor suitable for through-hole mounting with a 5-pin TO-264 package, ensuring robust physical and thermal handling.

The device offers a maximum collector-emitter voltage of 260 V and a maximum power dissipation of 200 W. It includes a thermally matched bias diode that eliminates thermal equilibrium lag and thermal runaway, providing superior thermal integrity and audio sound quality.

Its minimum DC current gain of 45 and maximum transition frequency of 1 MHz make it well-suited for high-fidelity consumer and professional audio products. The transistor supports operation across a wide temperature range from -65°C to 150°C, enhancing durability in industrial and lab environments.

With dimensions measuring approximately 20.02 mm length, 46.79 mm height, and 5.18 mm width, the NJL3281DG fits standard power transistor requirements while providing high-safe operating areas. The 5-pin package enhances mounting reliability on various PCB designs.

This transistor is ideal for applications involving audio amplifiers, transistor die protection, and other electronic circuit designs requiring high power handling and thermal stability. Its performance is optimized for industrial, laboratory, audio, and commercial manufacturing uses.

The transistor has a maximum DC collector current of 25 A. It features a maximum collector-emitter voltage (Vceo) of 260 V for high voltage tolerance. Its 5-pin TO-264 package supports reliable through-hole mounting. Minimum DC current gain (hFE) is 45 ensuring good amplification.

Operates safely between -65°C and 150°C for diverse environmental conditions. Maximum power dissipation rating is 200 W enabling high power applications. Thermally matched bias diode design eliminates thermal runaway enhancing reliability.

Configured as a single transistor with NPN polarity suitable for audio amplifier and protection applications. Pin count is 5 with package dimensions of approximately 20.02 mm length, 46.79 mm height, and 5.18 mm width. Country of origin is Republic of Korea.

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