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onsemi 600 mA NPN 40 V 3-Pin SC-70 Surface Mount Bipolar Transistor MMBT2222AWT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 1mm
Length 2.2mm
Model MMBT2222AWT1G
Width 1.35mm
Mount Type Surface
Series MMBT2222AW
Maximum Operating Temperature 150°C
Package Type SC-70
Pin Count 3
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 75V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 150mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi MMBT2222AWT1G Transistor, 600 mA NPN, 40 V, 3-Pin SC-70Brand onsemi
Nexperia PMST2222A,115 Transistor, 600 mA NPN, 40 V, 3-Pin UMTBrand Nexperia

Key Features

  • Supports maximum DC collector current of 600 mA.
  • Maximum collector-emitter voltage rating of 40 V for stable operation.
  • Housed in compact SC-70 surface mount package saving board space.
  • Minimum DC current gain (hFE) of 35 ensures reliable amplification.
  • Maximum power dissipation rated at 150 mW.
  • High maximum transition frequency of 100 MHz for fast switching.
  • Operates safely up to 150°C maximum temperature.
  • NPN transistor configuration suitable for general purpose amplification.

Product Description

onsemi MMBT2222AWT1G is a NPN bipolar transistor designed for general purpose signal amplification and switching applications in electronic circuits. It features a maximum DC collector current of 600 mA and a collector-emitter voltage of 40 V, making it suitable for low power operation in embedded systems, consumer electronics, and industrial controls.

The device is housed in a miniature SC-70 (SOT-323) surface mount package, which offers efficient space utilization on printed circuit boards. It supports a maximum power dissipation of 150 mW and has a minimum DC current gain (hFE) of 35, enabling effective amplification with low noise.

Its maximum transition frequency of 100 MHz allows for high-speed switching, while the maximum operating temperature of 150°C ensures reliability under varying thermal conditions. The transistor configuration is single NPN, with 3 pins designed for surface mount technology, making it compatible with automated assembly processes.

This transistor complies with the AEC-Q101 automotive standard, suitable for demanding automotive and industrial electronics applications. It is made in China and offers robust performance in a compact form factor.

Maximum DC collector current of 600 mA. Collector-emitter voltage up to 40 V. Compact 3-pin SC-70 surface mount package. Minimum DC current gain of 35 for amplification. Maximum power dissipation of 150 mW. High-frequency operation up to 100 MHz.

Operating temperature range up to 150°C. NPN single transistor configuration for versatile use. AEC-Q101 automotive compliant.

This onsemi MMBT2222AWT1G transistor is ideal for use in industrial, automotive, electronic consumer devices, and manufacturing applications where efficient switching and amplification in a compact footprint are essential. Explore more electronics and semiconductor components in the EnvMart catalog for your projects and production needs.

Explore more products in our Bipolar Transistors category.

onsemi 600 mA NPN 40 V 3-Pin SC-70 Surface Mount Bipolar Transistor MMBT2222AWT1G
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Frequently Asked Questions

The maximum DC collector current for the MMBT2222AWT1G is 600 mA.

This model has a maximum collector-emitter voltage rating of 40 V, ensuring stable operation.

The MMBT2222AWT1G is housed in a compact SC-70 surface mount package.

The maximum power dissipation rated for this transistor is 150 mW.

It has a minimum DC current gain (hFE) of 35, which supports effective amplification.

The maximum transition frequency for this transistor is 100 MHz, allowing for fast switching applications.

This model operates safely up to a maximum temperature of 150°C.

The MMBT2222AWT1G features a 3-pin configuration for surface mount technology.

Yes, it complies with the AEC-Q101 automotive standard, making it suitable for automotive applications.

This model is configured as a single NPN transistor, suitable for general purpose amplification.

The MMBT2222AWT1G has a height of 1 mm and a width of 1.35 mm.

It is suitable for general purpose signal amplification and switching applications in electronic circuits, including embedded systems and consumer electronics.

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