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onsemi PNP RF Transistor 3-Pin SOT-23, -50 mA Collector Current, -20 V Collector Emitter Voltage MMBTH81

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onsemi PNP RF Transistor 3-Pin SOT-23, -50 mA Collector Current, -20 V Collector Emitter Voltage MMBTH81

Name: onsemi PNP RF Transistor 3-Pin SOT-23, -50 mA Collector Current, -20 V Collector Emitter Voltage MMBTH81
Brand: onsemi
SKU: 255084
Price: 0.07 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	Philippines
Brand	onsemi
Height	0.04mm
Length	2.92mm
Model	MMBTH81
Width	1.3mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-20V
Minimum DC Current Gain hFE	60
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	3V
Maximum Collector Base Voltage VCBO	20V
Maximum Power Dissipation Pd	225mW
Maximum DC Collector Current Idc	-50mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz
onsemi MMBTH81 Transistor, -50 mA PNP, -20 V, 3-Pin SOT-23Brand	onsemi

Key Features

This transistor has a 3-pin SOT-23 surface mount package.
It features a maximum power dissipation of 225 mW.
Minimum DC current gain (hFE) is 60, ensuring reliable signal amplification.
Operating temperature range is from -55°C to 150°C, suitable for diverse environments.
Maximum transition frequency (ft) of 100 MHz supports high-frequency applications.
Transistor polarity is PNP, specifically configured as a single transistor.
Designed for surface mount technology for easy PCB assembly.
Originates from Philippines, ensuring quality manufacturing standards.

Product Description

The onsemi MMBTH81 transistor is a high-quality PNP RF transistor designed for general purpose use in RF amplifier and mixer circuits operating up to 250 MHz. It supports collector currents ranging from 1.0 mA to 30 mA, making it suitable for a wide range of low-power RF applications.

Equipped with a 3-pin SOT-23 surface mount package, this transistor offers compact size with precise dimensions of 2.92 mm length, 1.3 mm width, and 0.04 mm height, making it ideal for modern compact circuit designs.

This device is capable of handling a maximum DC collector current of -50 mA and a maximum collector emitter voltage of -20 V. It operates reliably within a temperature range of -55°C to 150°C, providing durability in various industrial and commercial applications.

The transistor features a minimum DC current gain (hFE) of 60 and a maximum transition frequency (ft) of 100 MHz, delivering efficient signal amplification for RF frequency tasks. The maximum power dissipation is rated at 225 mW, which supports sustained operation under typical loads.

3-Pin SOT-23 compact surface mount package for efficient PCB integration. Maximum DC collector current: -50 mA suitable for low-power applications. Collector emitter voltage up to -20 V for stable operation. Power dissipation of 225 mW ensures reliable performance.

Operates over a wide temperature range from -55°C to 150°C. High frequency capability with 100 MHz transition frequency. PNP polarity designed for diverse RF amplifier and mixer circuits. Constructed for general use with proven onsemi manufacturing standards.

Ideal for industrial, laboratory, telecommunications, and consumer electronics applications requiring compact and efficient RF transistor solutions. This product is manufactured in the Philippines and meets stringent quality controls.

Explore the comprehensive range of onsemi discrete semiconductors and Bipolar Transistors at EnvMart for your electronic component needs.