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Vishay Silicon Junction Switching Diode, Single, 1 A Forward Current, 1 kV Peak Reverse Voltage, DO-204AL GP10M-E3/54
Specifications
| Country of Origin | China |
|---|---|
| Diameter | 2.7mm |
| Brand | Vishay |
| Height | 2.7mm |
| Length | 5.2mm |
| Model | GP10M-E3/54 |
| Width | 2.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-204AL |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.2V |
| Peak Reverse Recovery Time trr | 3μs |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1kV |
Key Features
- The diode supports a peak non-repetitive forward surge current of 30 amperes.
- It has a fast peak reverse recovery time of 3 microseconds, enabling efficient switching.
- Designed to operate within a temperature range of -65°C to 175°C.
- Compact dimensions measuring 5.2 mm in length and 2.7 mm in diameter.
- Standard recovery type diode optimized for power rectification and switching applications.
- No compliance approvals or automotive standards are applicable to this component.
- Manufactured in China with a high reliability standard.
Product Description
Vishay GP10M-E3/54 is a single silicon junction switching diode designed for industrial and electronic power rectification applications. It supports a max forward current of 1 A and can block voltages up to 1 kV, making it versatile for use in power supply, signal processing, and protection circuits.
Its DO-204AL through-hole package allows for easy PCB integration, suitable for laboratory, industrial manufacturing, and electronic assembly use cases. The diode features low forward voltage drop of 1.2 V and a rapid recovery time of 3 μs, ensuring efficient switching and minimal power loss.
Operable across a broad temperature range from -65°C to 175°C, this diode is durable in harsh environmental conditions, reliable for electronics, automotive (non-automotive standard compliance), and HVAC system applications where switching diodes are essential.
The package dimensions of length 5.2 mm and diameter 2.7 mm facilitate compact circuit design. Peak surge currents up to 30 A allow temporary high current handling, making it robust for transient conditions common in industrial environments.
The diode is of standard recovery type offering high efficiency and reliability. Its 2-pin design ensures simple connectivity in through-hole mounting configurations. Ideal for OEMs needing consistent diode performance in power electronics projects.
Manufactured under Vishay's quality standards in China ensures trusted semiconductor quality. This silicon junction diode supports multiple industrial sectors including manufacturing, power electronics, instrumentation, and automotive electronic device prototyping.
Explore a broad range of Vishay semiconductor components and Switching Diodes in the EnvMart industrial electronics category for all your electronic component needs.
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Frequently Asked Questions
The maximum forward current of this diode is 1 A.
It can block voltages up to 1 kV, making it suitable for various applications.
The diode supports a peak non-repetitive forward surge current of 30 A.
It features a fast peak reverse recovery time of 3 microseconds.
This diode operates within a temperature range of -65°C to 175°C.
It has compact dimensions measuring 5.2 mm in length and 2.7 mm in diameter.
The diode comes in a DO-204AL through-hole package, allowing for easy PCB integration.
The maximum forward voltage drop is 1.2 V.
This model features a 2-pin design for simple connectivity.
It is designed for power rectification and switching applications in industrial and electronic circuits.
It is manufactured in China under Vishay's quality standards.
This diode is configured as a single silicon junction diode.
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