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Vishay Silicon Junction Switching Diode Single 2 A Surface Mount DO-214AC 1 kV SA2M-E3/5AT

Category Switching Diode Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 2.09mm
Length 4.5mm
Model SA2M-E3/5AT
Width 2.79mm
Mount Type Surface
Series SA2M
Maximum Operating Temperature 150°C
Package Type DO-214AC
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 55A
Maximum Forward Voltage Vf 1.1V
Peak Reverse Recovery Time trr 1.5μs
Maximum Forward Current If 2A
Maximum Peak Reverse Repetitive Voltage Vrrm 1kV

Key Features

  • This diode features a peak reverse repetitive voltage of 1 kV suitable for high voltage applications.
  • Peak reverse recovery time is fast at 1.5 microseconds ensuring efficient switching performance.
  • The maximum forward voltage drop is 1.1 V providing low conduction losses.
  • Thermal operating range spans from -55°C to 150°C for reliable operation in varied conditions.
  • The device has a compact package size of 4.5 mm length, 2.79 mm width, and 2.09 mm height optimized for space-constrained circuit boards.
  • It supports a peak non-repetitive forward surge current of 55 A for robust transient endurance.
  • Designed as a standard recovery rectifier diode ideal for power conversion and switching circuits.
  • Manufactured in China with surface mount design supporting easy automated assembly.

Product Description

Vishay SA2M-E3/5AT is a high-efficiency silicon junction Switching Diode rated for a maximum forward current of 2 A and peak reverse voltage of 1 kV. Packaged in a DO-214AC surface mount package, this diode offers compact dimensions of 4.5 mm length, 2.79 mm width, and 2.09 mm height, making it suitable for densely populated electronic assemblies.

This diode exhibits a peak reverse recovery time of 1.5 μs, allowing fast switching essential for power electronics and rectification circuits. It has a maximum forward voltage of 1.1 V, reducing conduction losses and improving energy efficiency in applications.

Operational temperature ranges from -55°C to 150°C, providing reliability in harsh industrial environments. The device can withstand a peak non-repetitive forward surge current of 55 A, which ensures durability against transient surges commonly encountered in power supply designs.

The SA2M-E3/5AT diode is part of Vishay's SA2M series of standard recovery rectifiers, widely used in power management, switching power supplies, and electronic component manufacturing. Its surface mount design facilitates automated insertion and soldering, enhancing production efficiency.

Single silicon junction diode configuration. Maximum forward current of 2 A. Peak reverse recovery time of 1.5 microseconds. Surface mount DO-214AC package type. Operating temperature from -55 to 150°C. Peak reverse voltage of 1 kV.

Compact package dimensions for PCB assembly. High surge current capability of 55 A peak.

This diode is essential in industrial, electronic manufacturing, automotive electronics, and power supply sectors for switching and rectification tasks. Vishay’s established reputation ensures product quality and reliability.

Explore more Vishay semiconductor components and diodes at EnvMart for diverse industrial and electronics applications.

Vishay Silicon Junction Switching Diode Single 2 A Surface Mount DO-214AC 1 kV SA2M-E3/5AT
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Frequently Asked Questions

The maximum forward current of this diode is 2 A.

It has a peak reverse repetitive voltage of 1 kV, making it suitable for high voltage applications.

This diode has dimensions of 4.5 mm in length, 2.79 mm in width, and 2.09 mm in height.

The peak reverse recovery time is 1.5 microseconds, allowing for efficient switching performance.

The operational temperature range spans from -55°C to 150°C, providing reliability in various conditions.

The maximum forward voltage drop is 1.1 V, which helps reduce conduction losses.

It is packaged in a DO-214AC surface mount package, optimized for space-constrained circuit boards.

The diode can withstand a peak non-repetitive forward surge current of 55 A.

It is widely used in power management, switching power supplies, and electronic component manufacturing.

This model has a pin count of 2, typical for standard recovery rectifier diodes.

The diode is manufactured in China.

It features a single silicon junction diode configuration.

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