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Vishay Switching Diode, Single, 16 A, 600 V, 2-Pin, TO-220F Package FESF16JT-E3/45
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 15.24mm |
| Length | 10.26mm |
| Model | FESF16JT-E3/45 |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220F |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 250A |
| Maximum Forward Voltage Vf | 1.5V |
| Peak Reverse Recovery Time trr | 50ns |
| Maximum Forward Current If | 16A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 600V |
Key Features
- Designed for through hole mounting in electronic circuits.
- Features ultrafast recovery with peak reverse recovery time of 50 nanoseconds.
- Maximum forward voltage drop of 1.5 V ensuring efficient conduction.
- Operates reliably in temperature range from -65°C to 150°C.
- Capable of handling peak non-repetitive forward surge current of 250 A.
- Compact dimensions of 10.26 mm length, 15.24 mm height and 4.83 mm width.
- Suitable for power rectification and switching applications in electronics and industrial equipment.
Product Description
Vishay FESF16JT-E3/45 is a high-performance switching diode designed for demanding power and electronic circuitry. This single silicon junction diode supports a maximum forward continuous current of 16 A and can withstand a peak reverse repetitive voltage of 600 V, making it ideal for rectification and fast switching tasks.
Housed in a robust TO-220F package, it offers reliable through-hole mounting for secure integration into printed circuit boards. The diode’s ultrafast recovery time of 50 nanoseconds minimizes losses and improves efficiency in switching circuits.
Its maximum forward voltage drop is 1.5 V which helps reduce power dissipation during operation. Capable of operating in a broad temperature range from -65°C to 150°C, this diode maintains performance in harsh industrial and commercial environments.
Key physical dimensions include a length of 10.26 mm, height of 15.24 mm, and width of 4.83 mm, enabling compact installation into power modules and switching assemblies. The diode is rated for a peak non-repetitive forward surge current of 250 A, providing robustness against transient overloads common in power applications.
Designed for power rectification and switching in industrial, automotive, and electronic sectors. Suitable for use in power supplies, inverters, and general electronic control equipment. High reliability and long service life under continuous high current conditions.
The ultrafast recovery characteristic reduces switching losses significantly. Supported by Vishay Semiconductor Diodes and Rectifiers product line. Country of origin: China. Explore the extensive Vishay Switching Diode portfolio and reliable semiconductor components on EnvMart for high quality and performance assurance.
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Frequently Asked Questions
The maximum forward continuous current for this diode is 16 A.
This model has a peak reverse repetitive voltage rating of 600 V.
The peak reverse recovery time is 50 nanoseconds, which contributes to its ultrafast recovery characteristic.
The dimensions of the TO-220F package are 10.26 mm in length, 15.24 mm in height, and 4.83 mm in width.
The maximum forward voltage drop is 1.5 V, ensuring efficient conduction during operation.
It operates reliably within a temperature range from -65°C to 150°C.
The diode is capable of handling a peak non-repetitive forward surge current of 250 A.
This model is designed for through-hole mounting in electronic circuits.
This diode has a single diode configuration.
It is suitable for power rectification and switching applications in industrial, automotive, and electronic sectors.
The country of origin for this diode is China.
This model is classified as a silicon junction diode.
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