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Vishay Switching Diode Single Silicon Junction 1 A 200 V DO-213AB EGL41D-E3/96

Category Switching Diode Brand Vishay Condition New

Specifications

Country of Origin Taiwan
Diameter 2.67mm
Brand Vishay
Height 2.67mm
Length 5.2mm
Model EGL41D-E3/96
Width 2.67mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type DO-213AB
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 50ns
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 200V

Key Features

  • Rated maximum forward current of 1 ampere for reliable switching performance.
  • Compact DO-213AB surface mount package with 2 pins and dimensions 5.2mm length and 2.67mm diameter.
  • Maximum reverse repetitive voltage of 200 volts ensures robust blocking capability.
  • Peak reverse recovery time of 50 nanoseconds ideal for high-frequency switching circuits.
  • Operation temperature range from -65°C up to 175°C enables use in harsh environments.
  • Peak non-repetitive forward surge current of 30 amperes withstands transient events.
  • Silicon junction construction provides stable and efficient electrical characteristics.
  • Produced in Taiwan, Province Of China ensuring quality manufacturing standards.

Product Description

Vishay EGL41D-E3/96 Switching Diode is a single silicon junction diode encased in a DO-213AB surface mount package. It is rated for a maximum forward current of 1 ampere and a maximum peak reverse voltage of 200 volts, making it suitable for a wide range of switching and rectifier applications.

This diode is designed with ultrafast recovery features, exhibiting a peak reverse recovery time as low as 50 nanoseconds, which effectively reduces switching losses and improves efficiency in high-frequency circuits.

The device operates reliably over a wide temperature range from -65°C to 175°C, accommodating harsh industrial and commercial environments. The peak non-repetitive forward surge current rating of 30 amperes allows it to withstand transient overloads, enhancing robustness.

Its compact dimensions of 5.2mm length and 2.67mm diameter in the DO-213AB package enable easy integration on printed circuit boards via surface mount technology, ensuring space-efficient design.

Manufactured in Taiwan, this diode meets stringent quality controls and industry standards for semiconductor components. Rated maximum forward current of 1 ampere for reliable switching performance. Compact DO-213AB surface mount package with 2 pins and dimensions 5.2mm length and 2.67mm diameter.

Maximum reverse repetitive voltage of 200 volts ensures robust blocking capability. Peak reverse recovery time of 50 nanoseconds ideal for high-frequency switching circuits. Operation temperature range from -65°C up to 175°C enables use in harsh environments.

Peak non-repetitive forward surge current of 30 amperes withstands transient events. Silicon junction construction provides stable and efficient electrical characteristics. Produced in Taiwan, Province Of China ensuring quality manufacturing standards.

Application in switched mode power supplies, inverters, and freewheeling diode circuits requiring ultrafast recovery.

This Switching Diode is ideal for use in industrial, electronics manufacturing, power supply design, and HVAC systems that demand fast switching speeds and high reliability. The compact surface mount design facilitates efficient assembly in automated production lines.

Explore the full range of Vishay diodes and semiconductors at EnvMart to meet diverse application requirements with guaranteed performance and quality.

Vishay Switching Diode Single Silicon Junction 1 A 200 V DO-213AB EGL41D-E3/96
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Frequently Asked Questions

The maximum forward current rating of this diode is 1 ampere, ensuring reliable switching performance.

This model features a peak reverse recovery time of 50 nanoseconds, making it suitable for high-frequency switching applications.

The maximum reverse repetitive voltage for this diode is 200 volts, providing robust blocking capability.

The DO-213AB package has dimensions of 5.2mm in length and 2.67mm in diameter, making it compact for surface mount applications.

The diode operates within a temperature range from -65°C to 175°C, allowing it to function in harsh environments.

The peak non-repetitive forward surge current rating is 30 amperes, which allows it to withstand transient events effectively.

It uses a silicon junction construction, which provides stable and efficient electrical characteristics.

This diode has a pin count of 2, suitable for surface mount applications.

This diode is suitable for applications in switched mode power supplies, inverters, and freewheeling diode circuits requiring ultrafast recovery.

This diode is produced in Taiwan, ensuring adherence to quality manufacturing standards.

The maximum forward voltage for this diode is 1 volt, which is typical for silicon junction diodes.

The mount type of this diode is surface mount, facilitating easy integration into printed circuit boards.

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