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| Country of Origin | Taiwan |
|---|---|
| Diameter | 2.67mm |
| Brand | Vishay |
| Height | 2.67mm |
| Length | 5.2mm |
| Model | EGL41D-E3/96 |
| Width | 2.67mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-213AB |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1V |
| Peak Reverse Recovery Time trr | 50ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
Vishay EGL41D-E3/96 Switching Diode is a single silicon junction diode encased in a DO-213AB surface mount package. It is rated for a maximum forward current of 1 ampere and a maximum peak reverse voltage of 200 volts, making it suitable for a wide range of switching and rectifier applications.
This diode is designed with ultrafast recovery features, exhibiting a peak reverse recovery time as low as 50 nanoseconds, which effectively reduces switching losses and improves efficiency in high-frequency circuits.
The device operates reliably over a wide temperature range from -65°C to 175°C, accommodating harsh industrial and commercial environments. The peak non-repetitive forward surge current rating of 30 amperes allows it to withstand transient overloads, enhancing robustness.
Its compact dimensions of 5.2mm length and 2.67mm diameter in the DO-213AB package enable easy integration on printed circuit boards via surface mount technology, ensuring space-efficient design.
Manufactured in Taiwan, this diode meets stringent quality controls and industry standards for semiconductor components. Rated maximum forward current of 1 ampere for reliable switching performance. Compact DO-213AB surface mount package with 2 pins and dimensions 5.2mm length and 2.67mm diameter.
Maximum reverse repetitive voltage of 200 volts ensures robust blocking capability. Peak reverse recovery time of 50 nanoseconds ideal for high-frequency switching circuits. Operation temperature range from -65°C up to 175°C enables use in harsh environments.
Peak non-repetitive forward surge current of 30 amperes withstands transient events. Silicon junction construction provides stable and efficient electrical characteristics. Produced in Taiwan, Province Of China ensuring quality manufacturing standards.
Application in switched mode power supplies, inverters, and freewheeling diode circuits requiring ultrafast recovery.
This Switching Diode is ideal for use in industrial, electronics manufacturing, power supply design, and HVAC systems that demand fast switching speeds and high reliability. The compact surface mount design facilitates efficient assembly in automated production lines.
Explore the full range of Vishay diodes and semiconductors at EnvMart to meet diverse application requirements with guaranteed performance and quality.
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