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onsemi PNP Bipolar Junction Transistor 1.5 A 25 V TO-92 3-Pin Through Hole SS8550CTA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 20.95mm
Length 5.2mm
Model SS8550CTA
Width 4.19mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo 25V
Minimum DC Current Gain hFE 45
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -40V
Maximum Power Dissipation Pd 1W
Maximum DC Collector Current Idc 1.5A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • This transistor uses a TO-92 package with through hole mount type.
  • Designed as a single transistor configuration for various circuit applications.
  • Maximum power dissipation rating of 1 watt to support medium power operations.
  • Minimum DC current gain (hFE) of 45 provides reliable amplification.
  • Capable of operation up to 150°C maximum operating temperature.
  • Offers a maximum transition frequency of 1 MHz, suitable for small signal applications.
  • Features a 3-pin configuration compatible with standard electronic assemblies.
  • Compact dimensions with height of 20.95 mm, length 5.2 mm, and width 4.19 mm.

Product Description

onsemi SS8550CTA is a PNP bipolar junction transistor designed for medium power amplification and switching in electronic circuits. It supports a maximum DC collector current of 1.5 amperes and can operate with a maximum collector emitter voltage of 25 volts, making it suitable for low to moderate voltage applications.

The transistor is housed in a TO-92 package with a through hole mounting style, ensuring easy integration into printed circuit boards. It features a single transistor configuration optimized for various circuit applications requiring high reliability and compact size.

This device has a minimum DC current gain (hFE) of 45, allowing effective signal amplification, and a maximum power dissipation of 1 watt to accommodate moderate power usage without overheating. The maximum transition frequency of 1 MHz makes it well-suited for small signal and switching circuits typical in laboratory, industrial, and consumer electronics contexts.

Operating safely up to 150°C maximum temperature, the SS8550CTA ensures stability and durability even in demanding thermal environments. Its three-pin design and compact dimensions (height 20.95 mm, length 5.2 mm, width 4.19 mm) facilitate versatile applications including signal amplification, switching, and electronic control systems in industrial and manufacturing equipment.

This transistor uses a TO-92 package with through hole mount type. Designed as a single transistor configuration for various circuit applications. Maximum power dissipation rating of 1 watt to support medium power operations.

Minimum DC current gain (hFE) of 45 provides reliable amplification. Capable of operation up to 150°C maximum operating temperature. Offers a maximum transition frequency of 1 MHz, suitable for small signal applications.

Features a 3-pin configuration compatible with standard electronic assemblies. Compact dimensions with height of 20.95 mm, length 5.2 mm, and width 4.19 mm.

This transistor is ideal for industrial, laboratory, manufacturing, and commercial electronics requiring reliable PNP bipolar junction transistors. onsemi's commitment to innovation and quality engineering supports a broad range of applications.

Browse the Electronics & Electricals category at EnvMart for more semiconductors, discrete transistors, and related components to meet your precise industrial needs.

Explore more products in our Bipolar Transistors category.

onsemi PNP Bipolar Junction Transistor 1.5 A 25 V TO-92 3-Pin Through Hole SS8550CTA
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Frequently Asked Questions

The maximum DC collector current for this model is 1.5 amperes.

It has a maximum power dissipation rating of 1 watt.

This transistor can operate at a maximum temperature of 150°C.

The SS8550CTA is housed in a TO-92 package with a through hole mounting style.

The minimum DC current gain (hFE) is 45, providing effective signal amplification.

The dimensions are height 20.95 mm, length 5.2 mm, and width 4.19 mm.

The maximum collector-emitter voltage (Vceo) is 25 volts.

It is suitable for medium power amplification and switching in various electronic circuits.

The maximum transition frequency is 1 MHz, making it suitable for small signal applications.

This model features a 3-pin configuration, compatible with standard electronic assemblies.

The maximum emitter-base voltage (VEBO) is -6 volts.

The SS8550CTA is a PNP bipolar junction transistor.

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