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onsemi Small Signal NPN Transistor 50 mA 120 V 3-Pin SOT-23 FJV1845FMTF

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.97mm
Length 2.9mm
Model FJV1845FMTF
Width 2.4mm
Mount Type Surface
Series FJV1845
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 120V
Minimum DC Current Gain hFE 150
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 120V
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 50mA
Transistor Configuration Single
Maximum Transition Frequency ft 110MHz

Key Features

  • Supports maximum DC collector current of 50 mA for low power applications.
  • Maximum collector-emitter voltage rated at 120 V ensuring high voltage tolerance.
  • Compact surface mount SOT-23 package with 3 pins for efficient PCB mounting.
  • Minimum DC current gain (hFE) of 150 for reliable amplification performance.
  • Maximum power dissipation of 300 mW suited for small signal purposes.
  • Transition frequency up to 110 MHz enabling high frequency switching.
  • Operates safely up to maximum temperature of 150°C for durability.
  • 3-pin configuration for simple transistor circuit designs.

Product Description

The onsemi FJV1845FMTF is a small signal NPN bipolar junction transistor designed for a variety of low power electronic applications requiring up to 50 mA DC collector current and voltage withstand up to 120 V. Packaged in a compact 3-pin SOT-23 surface mount package, it offers an excellent balance of size, power, and performance.

This transistor features a minimum current gain (hFE) of 150 and a maximum power dissipation rating of 300 mW, making it suitable for amplification and switching duties in consumer electronics, industrial controls, and communication circuits. Its transition frequency of 110 MHz supports high frequency switching operations common in signal processing and RF applications.

Designed to operate reliably up to 150°C, the FJV1845FMTF transistor ensures durable use in demanding environments. With a collector-base voltage maximum rating of 120 V and emitter-base voltage rating of 5 V, it is robust for standard bipolar transistor requirements.

The small form factor dimensions (Length: 2.9 mm, Width: 2.4 mm, Height: 0.97 mm) facilitate compact PCB layouts and efficient thermal performance. The surface mount package type allows for modern automated PCB assembly methods, improving production efficiency for manufacturers.

Supports maximum DC collector current of 50 mA for low power applications. Maximum collector-emitter voltage rated at 120 V ensuring high voltage tolerance. Compact surface mount SOT-23 package with 3 pins for efficient PCB mounting.

Minimum DC current gain (hFE) of 150 for reliable amplification performance. Maximum power dissipation of 300 mW suited for small signal purposes. Transition frequency up to 110 MHz enabling high frequency switching. Operates safely up to maximum temperature of 150°C for durability.

3-pin configuration for simple transistor circuit designs. Ensures NPN transistor polarity type for standard bipolar junction transistor applications. Dimensions: 2.9 mm length, 2.4 mm width, and 0.97 mm height, suitable for compact assemblies.

The onsemi FJV1845FMTF is an ideal choice for engineers and designers seeking a reliable, compact, and well-specified small signal transistor for use in industrial, electronic, communication, and general-purpose semiconductor applications.

Browse more Bipolar Transistors and discrete semiconductors at EnvMart for a wide selection of electronic components.

onsemi Small Signal NPN Transistor 50 mA 120 V 3-Pin SOT-23 FJV1845FMTF
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Frequently Asked Questions

The maximum DC collector current for this model is 50 mA, making it suitable for low power applications.

This transistor has a maximum collector-emitter voltage rating of 120 V, ensuring high voltage tolerance.

The transition frequency of this transistor is up to 110 MHz, which supports high frequency switching operations.

It comes in a compact SOT-23 surface mount package with a 3-pin configuration, suitable for efficient PCB mounting.

The minimum DC current gain (hFE) for this model is 150, providing reliable amplification performance.

The dimensions of this transistor are 2.9 mm in length, 2.4 mm in width, and 0.97 mm in height.

The maximum power dissipation rating for this transistor is 300 mW, making it suitable for small signal purposes.

This transistor operates safely up to a maximum temperature of 150°C, ensuring durability in demanding environments.

The maximum emitter-base voltage rating for this transistor is 5 V, suitable for standard bipolar transistor applications.

This model is an NPN bipolar junction transistor, designed for various low power electronic applications.

The surface mount design facilitates modern automated PCB assembly methods, improving production efficiency for manufacturers.

It is suitable for amplification and switching duties in consumer electronics, industrial controls, and communication circuits.

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