onsemi FJV1845FMTF is a high-quality small signal NPN bipolar junction transistor designed for low current and medium voltage applications. It features a maximum DC collector current of 50 mA and collector-emitter voltage of 120 V, allowing its use in sensitive switching and amplification circuits in consumer electronics and industrial equipment.
Encapsulated in a compact and reliable SOT-23 3-pin surface mount package, this transistor enables miniaturized circuit designs without compromising performance. The device exhibits a minimum DC current gain (hFE) of 150, ensuring efficient signal amplification, and a high transition frequency of 110 MHz suitable for RF and high-speed switching applications.
With a power dissipation rating of 300 mW and an operating temperature up to 150°C, the FJV1845FMTF maintains stable performance under demanding thermal conditions common in automotive electronics, power supplies, and industrial controllers.
The pin configuration and small form factor of this transistor enable easy and efficient PCB mounting for mass production. The device is RoHS compliant and does not carry specific standards or automotive certifications but is widely used for general-purpose transistor applications.
Typical applications include signal amplification, switching circuits, interface drivers, and general electronic component integration in telecommunications, instrumentation, and consumer devices.
Transistor polarity is NPN suitable for general amplification and switching. Maximum collector current is 50 mA ensuring low power applications. Collector-emitter voltage up to 120 V provides wide voltage margin. Small surface mount form factor SOT-23 for space-saving PCB layouts.
Maximum power dissipation is 300 mW for thermal reliability. Minimum DC current gain (hFE) of 150 supports moderate amplification. Maximum transition frequency of 110 MHz suits high-frequency circuits. Maximum operating temperature 150°C for reliability in harsh environments.
Pin count of 3 simplifies circuit design integration. Package dimensions approximately 2.9 mm length, 2.4 mm width, 0.97 mm height.
This onsemi transistor is a reliable choice for industrial, telecommunications, automotive, and consumer electronics applications where compact size and moderate power handling are required. Browse our Electronics & Electricals category for more Bipolar Transistors and discrete semiconductor solutions suitable for your design needs.
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