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onsemi Small Signal NPN Transistor 5 A, 20 V, 3-Pin TO-92 KSD5041RTA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.77mm
Length 5.2mm
Model KSD5041RTA
Width 4.19mm
Mount Type Through Hole
Series KSD5041
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo 20V
Minimum DC Current Gain hFE 180
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 40V
Maximum Power Dissipation Pd 750mW
Maximum DC Collector Current Idc 5A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • The transistor operates with a maximum power dissipation of 750 mW.
  • It features a minimum DC current gain of 180 for efficient amplification.
  • Designed for through-hole mounting with a compact TO-92 package.
  • Maximum collector-base voltage is rated at 40 V to ensure reliability.
  • Capable of operating up to 150°C maximum temperature.
  • Has a transition frequency of 1 MHz suitable for small signal frequency applications.
  • The transistor polarity is NPN and it has a single transistor configuration.
  • Physical dimensions include length 5.2 mm, width 4.19 mm, and height 21.77 mm.

Product Description

onsemi KSD5041RTA is a small signal NPN bipolar junction transistor featuring a maximum DC collector current of 5 A and maximum collector-emitter voltage of 20 V. It is housed in a 3-pin TO-92 package designed for through-hole mounting.

This transistor offers a minimum DC current gain (hFE) of 180, making it well suited for amplification in switching and control circuits. It dissipates up to 750 mW power and can operate at temperatures up to 150°C, ensuring durability in demanding electronic environments.

The maximum collector-base voltage rating of 40 V and maximum emitter-base voltage of 7 V provide reliable operation in various applications. The 1 MHz maximum transition frequency supports moderate frequency switching tasks.

Physically, it measures approximately 5.2 mm in length, 4.19 mm in width, and 21.77 mm in height, allowing for compact PCB layouts. The transistor configuration is single NPN type, ideal for general purpose amplification and switching.

This component is extensively used in industrial electronics, electronic control modules, audio amplifiers, and power regulation systems. It supports through-hole assembly techniques commonly employed in prototype and production boards.

The transistor operates with a maximum power dissipation of 750 mW. It features a minimum DC current gain of 180 for efficient amplification. Designed for through-hole mounting with a compact TO-92 package. Maximum collector-base voltage is rated at 40 V to ensure reliability.

Capable of operating up to 150°C maximum temperature. Has a transition frequency of 1 MHz suitable for small signal frequency applications. The transistor polarity is NPN and it has a single transistor configuration. Physical dimensions include length 5.2 mm, width 4.19 mm, and height 21.77 mm.

Ideal for industrial, electronic, and power control circuit applications. Explore a wide range of Bipolar Transistors and electronic components in the EnvMart catalog for your design and industrial needs.

onsemi Small Signal NPN Transistor 5 A, 20 V, 3-Pin TO-92 KSD5041RTA
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) of this transistor is rated at 20 V.

It operates with a maximum power dissipation of 750 mW.

The transistor features a minimum DC current gain (hFE) of 180, which is suitable for efficient amplification.

This transistor can operate at a maximum temperature of 150°C.

The physical dimensions are approximately 5.2 mm in length, 4.19 mm in width, and 21.77 mm in height.

It has a maximum transition frequency of 1 MHz, making it suitable for small signal frequency applications.

It is designed for through-hole mounting in a compact TO-92 package.

The maximum collector-base voltage (VCBO) is rated at 40 V.

The transistor configuration is single NPN type, ideal for general purpose amplification and switching.

The maximum DC collector current (Idc) is rated at 5 A.

The maximum emitter-base voltage (VEBO) is rated at 7 V.

This transistor is extensively used in industrial electronics, electronic control modules, audio amplifiers, and power regulation systems.

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