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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 10.41mm |
| Length | 10.67mm |
| Model | KSC5502DTM |
| Width | 4.83mm |
| Mount Type | Surface |
| Series | KSC5502D |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Minimum DC Current Gain hFE | 8 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 12V |
| Maximum Collector Base Voltage VCBO | 1200V |
| Maximum Power Dissipation Pd | 50W |
| Maximum DC Collector Current Idc | 2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
onsemi KSC5502DTM is a precision-engineered high voltage NPN bipolar junction transistor tailored for demanding power electronics applications. With a maximum collector-emitter voltage rating of 600V and a collector current capability of 2A, this transistor addresses a wide range of industrial, automotive, and electronic circuit needs.
The device features a TO-252 surface mount package that combines minimal PCB space requirements with excellent thermal characteristics, allowing efficient heat dissipation during operation. Its compact footprint is ideal for modern electronics requiring high power density and reliability.
Key technical parameters such as a maximum power dissipation of 50W and a maximum operating temperature of 150°C ensure robust performance under rigorous operating conditions. The transistor's minimum DC current gain of 8 and maximum transition frequency of 1MHz facilitate effective switching and amplification in various control and signal processing circuits.
Typical applications for the onsemi KSC5502DTM transistor include power supplies, motor control, industrial automation, and signal amplification in electronic devices. Its high collector base voltage of 1200V and emitter base voltage of 12V provide extra margin for safe operation within circuit designs.
Designed for high voltage operation with a collector-emitter voltage of 600V. Supports a maximum collector current of 2A suitable for various power circuits. Compact TO-252 surface mount package type for space-saving on PCBs.
Maximum power dissipation of 50W enables reliable thermal performance. Low minimum DC current gain of 8 ensures switching efficiency. Maximum operating temperature up to 150°C for robust industrial use. 3-pin configuration compatible with standard bipolar transistor layouts.
High collector base voltage rating of 1200V for enhanced performance margins. Maximum transition frequency of 1MHz suitable for medium frequency switching. Emitter base voltage maximum of 12V, supporting stable operation.
The part is new and ready for deployment in design and production environments.
EnvMart offers this transistor as part of its electronics components category, supporting engineers and electronics manufacturers with reliable semiconductor components. Browse our extensive catalog for more Bipolar Transistors and discrete semiconductor solutions.
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