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onsemi High Voltage NPN Bipolar Transistor, 2A, 600V, 50W Power Dissipation, TO-252 Surface Mount KSC5502DTM

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 10.41mm
Length 10.67mm
Model KSC5502DTM
Width 4.83mm
Mount Type Surface
Series KSC5502D
Maximum Operating Temperature 150°C
Package Type TO-252
Pin Count 3
Maximum Collector Emitter Voltage Vceo 600V
Minimum DC Current Gain hFE 8
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 12V
Maximum Collector Base Voltage VCBO 1200V
Maximum Power Dissipation Pd 50W
Maximum DC Collector Current Idc 2A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Designed for high voltage operation with a collector-emitter voltage of 600V.
  • Supports a maximum collector current of 2A suitable for various power circuits.
  • Compact TO-252 surface mount package type for space-saving on PCBs.
  • Maximum power dissipation of 50W enables reliable thermal performance.
  • Low minimum DC current gain of 8 ensures switching efficiency.
  • Maximum operating temperature up to 150°C for robust industrial use.
  • 3-pin configuration compatible with standard bipolar transistor layouts.
  • High collector base voltage rating of 1200V for enhanced performance margins.

Product Description

onsemi KSC5502DTM is a precision-engineered high voltage NPN bipolar junction transistor tailored for demanding power electronics applications. With a maximum collector-emitter voltage rating of 600V and a collector current capability of 2A, this transistor addresses a wide range of industrial, automotive, and electronic circuit needs.

The device features a TO-252 surface mount package that combines minimal PCB space requirements with excellent thermal characteristics, allowing efficient heat dissipation during operation. Its compact footprint is ideal for modern electronics requiring high power density and reliability.

Key technical parameters such as a maximum power dissipation of 50W and a maximum operating temperature of 150°C ensure robust performance under rigorous operating conditions. The transistor's minimum DC current gain of 8 and maximum transition frequency of 1MHz facilitate effective switching and amplification in various control and signal processing circuits.

Typical applications for the onsemi KSC5502DTM transistor include power supplies, motor control, industrial automation, and signal amplification in electronic devices. Its high collector base voltage of 1200V and emitter base voltage of 12V provide extra margin for safe operation within circuit designs.

Designed for high voltage operation with a collector-emitter voltage of 600V. Supports a maximum collector current of 2A suitable for various power circuits. Compact TO-252 surface mount package type for space-saving on PCBs.

Maximum power dissipation of 50W enables reliable thermal performance. Low minimum DC current gain of 8 ensures switching efficiency. Maximum operating temperature up to 150°C for robust industrial use. 3-pin configuration compatible with standard bipolar transistor layouts.

High collector base voltage rating of 1200V for enhanced performance margins. Maximum transition frequency of 1MHz suitable for medium frequency switching. Emitter base voltage maximum of 12V, supporting stable operation.

The part is new and ready for deployment in design and production environments.

EnvMart offers this transistor as part of its electronics components category, supporting engineers and electronics manufacturers with reliable semiconductor components. Browse our extensive catalog for more Bipolar Transistors and discrete semiconductor solutions.

onsemi High Voltage NPN Bipolar Transistor, 2A, 600V, 50W Power Dissipation, TO-252 Surface Mount KSC5502DTM
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Frequently Asked Questions

The maximum collector-emitter voltage rating of this transistor is 600V.

This model supports a maximum collector current of 2A.

It has a maximum power dissipation capacity of 50W.

The maximum operating temperature for this transistor is 150°C.

This transistor uses a TO-252 surface mount package type.

The minimum DC current gain is 8.

The maximum transition frequency is 1MHz.

The dimensions are 10.67mm in length, 4.83mm in width, and 10.41mm in height.

The maximum collector base voltage rating is 1200V.

Typical applications include power supplies, motor control, industrial automation, and signal amplification in electronic devices.

It has a single transistor configuration with a 3-pin layout.

The maximum emitter base voltage is 12V.

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