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onsemi Small Signal NPN Transistor 100 mA, 30 V, 3-Pin TO-92 BC549BTA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.77mm
Length 5.2mm
Model BC549BTA
Width 4.19mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 30V
Minimum DC Current Gain hFE 110
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 30V
Maximum Power Dissipation Pd 500mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Supports maximum DC collector current of 100 mA.
  • Maximum collector emitter voltage rated at 30 V.
  • Packaged in 3-Pin TO-92 through-hole package.
  • Minimum DC current gain (hFE) of 110 ensuring effective amplification.
  • Maximum power dissipation capacity of 500 mW.
  • Operates within temperature range from -55°C to 150°C.
  • Maximum transition frequency of 1 MHz suitable for general-purpose switching.
  • Compact dimensions with height 21.77 mm, width 4.19 mm, and length 5.2 mm.

Product Description

onsemi BC549BTA is a small signal NPN bipolar junction transistor intended for various electronic and semiconductor applications requiring reliable switching and amplification. This transistor accommodates a maximum collector current of 100 mA and can withstand collector emitter voltage up to 30 V, making it suitable for low power signal amplification.

Housed in a 3-Pin TO-92 package, it supports through-hole mounting, allowing easy integration into circuit boards. The device offers a minimum DC current gain (hFE) of 110, enabling effective signal amplification.

It has a maximum power dissipation rating of 500 mW and a maximum transition frequency of 1 MHz, suitable for general switching and amplification tasks. This component operates reliably in a wide temperature range from -55°C to 150°C, ensuring durability in varied industrial and laboratory environments.

Compact physical dimensions (Height: 21.77 mm, Width: 4.19 mm, Length: 5.2 mm) contribute to efficient PCB space utilization. Supports maximum DC collector current of 100 mA. Maximum collector emitter voltage rated at 30 V.

3-Pin TO-92 package suitable for through-hole mounting. Minimum DC current gain of 110 ensures efficient amplification. Maximum power dissipation of 500 mW. Operational temperature range from -55°C to 150°C. Maximum transition frequency of 1 MHz.

Compact dimensions for PCB design efficiency. Single NPN transistor configuration. This transistor is widely used in industrial, laboratory, electronic devices manufacturing, and educational applications where small signal switching is required.

Explore more high-quality semiconductor products in the Bipolar Transistors category at EnvMart.

onsemi Small Signal NPN Transistor 100 mA, 30 V, 3-Pin TO-92 BC549BTA
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Frequently Asked Questions

The maximum collector current for this transistor is 100 mA.

The maximum collector-emitter voltage (Vceo) for this model is rated at 30 V.

The minimum DC current gain (hFE) is 110, which ensures effective amplification.

It has a maximum power dissipation capacity of 500 mW.

This transistor operates within a temperature range from -55°C to 150°C.

The dimensions are height 21.77 mm, width 4.19 mm, and length 5.2 mm.

It is packaged in a 3-Pin TO-92 package, suitable for through-hole mounting.

The maximum transition frequency is 1 MHz, making it suitable for general-purpose switching.

This transistor has a pin count of 3.

The configuration is a single NPN transistor.

This transistor is suitable for various electronic and semiconductor applications requiring reliable switching and amplification.

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