onsemi Transistor, 800 mA NPN Bipolar Junction, 50 V Collector Emitter Voltage, 3-Pin TO-92 BC33716TA

onsemi BC33716TA is a small signal NPN bipolar junction transistor designed for electronic circuits requiring a 800 mA maximum DC collector current and a collector emitter voltage rating of 50 V. Housed in a 3-pin TO-92 package with through hole mount, this transistor offers a robust solution for signal amplification and switching with excellent gain characteristics.

The transistor features a maximum power dissipation rating of 625 mW, making it suitable for moderate power applications without compromising reliability. The device supports a minimum DC current gain of 60 and a maximum transition frequency of 50 MHz, allowing it to be used in a variety of electronic devices and industrial equipment.

This component maintains its performance in extreme environments with an operating temperature range from -55°C up to 150°C. Its compact dimensions - 21.77 mm height, 4.19 mm width, and 5.2 mm length - enable efficient PCB layout and space saving in circuit design.

Key electrical limits such as maximum collector base voltage (10 V) and emitter base voltage (5 V) are suitable for typical small-signal transistor applications including switching, amplification, and signal modulation in consumer electronics, industrial controls, and automotive electronics.

The onsemi BC33716TA transistor complies with industrial standards though no specific certifications are listed. It comes in a tape packaging format, designed to facilitate automated insertion in manufacturing processes for increased efficiency.

Designed for through hole mounting in TO-92 package type. Maximum power dissipation of 625 mW ensures reliability under moderate power conditions. Minimum DC current gain (hFE) of 60 provides efficient signal amplification.

Operating temperature ranges from -55°C to 150°C for broad environmental tolerance. Maximum transition frequency of 50 MHz supports moderate frequency applications. Compact dimensions with height 21.77 mm, width 4.19 mm, and length 5.2 mm.

Single transistor configuration with NPN polarity for common switching and amplification applications. Maximum voltage ratings: Collector Base Voltage 10 V and Emitter Base Voltage 5 V. Product is new and manufactured in India.

This transistor is commonly used across electronics industries including consumer devices, industrial equipment, and automotive electronics where small signal bipolar junction transistors are needed. Its acceptance across multiple industrial sectors makes it a versatile component in electronics manufacturing and repair.

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