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onsemi Dual NPN and PNP Transistor 3 A, 50 V, 5-Pin Surface Mount CPH5524-TL-E

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.9mm
Length 2.9mm
Model CPH5524-TL-E
Width 1.6mm
Mount Type Surface
Series CPH5524
Maximum Operating Temperature 150°C
Package Type CPH
Minimum Operating Temperature -55°C
Pin Count 5
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 100V
Maximum Power Dissipation Pd 1.2W
Maximum DC Collector Current Idc 3A
Transistor Configuration Common Emitter
Maximum Transition Frequency ft 390MHz

Key Features

  • Dual NPN and PNP transistors in one package provide versatile circuit design options.
  • Surface mount CPH package with 5 pins ensures compact PCB layout.
  • Maximum collector emitter voltage of 50 V suitable for mid-power switching and amplification.
  • Maximum DC collector current rated at 3 A for robust power handling.
  • High DC current gain (hFE) minimum value of 200 ensures efficient amplification.
  • Wide operating temperature range from -55°C to 150°C supports industrial applications.
  • Maximum power dissipation of 1.2 W maintains device reliability under load.
  • Maximum transition frequency of 390 MHz supports high-frequency switching operations.

Product Description

onsemi CPH5524-TL-E is a dual bipolar transistor package that contains both an NPN and a PNP transistor in a compact 5-pin surface mount CPH package. Designed for common emitter configuration, this device supports switching and amplification functions in industrial electronics where moderate current and voltage ratings are required.

This transistor assembly offers a maximum DC collector current of 3 A and maximum collector emitter voltage of 50 V, suitable for applications such as power regulation, signal amplification, and control circuits. The device supports a surge-free high-frequency transition up to 390 MHz making it apt for RF and switching applications.

Key electrical ratings include a minimum DC current gain (hFE) of 200, allowing efficient signal gain performance. Power dissipation is rated at 1.2 W under standard operating conditions, and the device is designed to operate reliably over wide temperature ranges from -55°C up to 150°C, making it suitable for automotive and industrial environments.

The compact dimensions of 2.9 mm length, 1.6 mm width, and 0.9 mm height facilitate integration on high-density printed circuit boards with surface mount technology. This transistor does not carry any specific automotive certification, but its rugged construction makes it appropriate for general industrial and commercial electronics manufacturing.

Industrial control and automation circuits. Power management and regulation. Signal amplification in RF circuits. Consumer electronic devices requiring discrete bipolar transistors. Set includes one onsemi CPH5524-TL-E dual transistor unit in 5-pin surface mount package on reel packaging for streamlined manufacturing processes.

Explore the broad range of onsemi Bipolar Transistors in the EnvMart catalog for additional power semiconductor solutions optimized for electronics and electrical components manufacturing.

onsemi Dual NPN and PNP Transistor 3 A, 50 V, 5-Pin Surface Mount CPH5524-TL-E
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) of this model is 50 V, making it suitable for mid-power switching and amplification applications.

This dual transistor has a maximum DC collector current rating of 3 A, allowing it to handle robust power requirements in various applications.

The minimum DC current gain (hFE) for this model is 200, which ensures efficient signal amplification performance.

It operates over a wide temperature range from -55°C to 150°C, making it suitable for industrial applications.

The dimensions of this transistor are 2.9 mm in length, 1.6 mm in width, and 0.9 mm in height, facilitating compact PCB layouts.

The maximum power dissipation for the CPH5524-TL-E is rated at 1.2 W, ensuring reliability under load conditions.

The maximum transition frequency of this model is 390 MHz, supporting high-frequency switching operations.

This model comes in a 5-pin surface mount CPH package, designed for compact integration on printed circuit boards.

It is suitable for applications such as power management, signal amplification in RF circuits, and industrial control systems.

The transistor configuration for this model is common emitter, which is typical for switching and amplification functions.

The maximum emitter base voltage (VEBO) for the CPH5524-TL-E is 6 V, which is important for ensuring proper operation in circuits.

This package contains both NPN and PNP transistors, providing versatility in circuit design.

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