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onsemi Small Signal PNP Transistor 100 mA, 45 V, 3-Pin SOT-323 BC857BWT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 2.2mm
Model BC857BWT1G
Width 1.35mm
Mount Type Surface
Series BC857B
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 125
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 150mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi SBC807-40WT1G Transistor, 500 mA PNP, 45 V, 3-Pin SOT-323Brand onsemi

Key Features

  • Designed for surface mounting in the SOT-323 package.
  • Maximum DC collector current of 100 mA suitable for low-power applications.
  • Collector-emitter voltage rating of 45 V for moderate voltage handling.
  • Transistor polarity is PNP ensuring compatibility with PNP circuit configurations.
  • Typical power dissipation is 150 mW allowing efficient heat management.
  • Minimum DC current gain (hFE) of 125 ensuring amplification capabilities.
  • Operating temperature range from -55°C to 150°C for reliable performance in harsh environments.
  • Maximum transition frequency is 100 MHz suitable for high-frequency applications.

Product Description

onsemi BC857BWT1G is a small signal PNP transistor designed for surface mount applications with a compact 3-pin SOT-323 package. It supports a maximum collector current of 100 mA and withstands a collector-emitter voltage up to 45 V, making it suitable for low to moderate power switching and amplification tasks.

This transistor features a high current gain with a minimum hFE of 125, providing reliable amplification for various electronic circuits. With a power dissipation of 150 mW, it ensures efficient operation within thermal limits.

The component meets the automotive AEC-Q101 standard, ensuring robustness and reliability for automotive and industrial environments. It operates within a wide temperature range from -55°C to 150°C, making it suitable for harsh and demanding conditions.

The maximum transition frequency of 100 MHz supports high-frequency applications such as signal amplification and switching.

Its small 3-pin SOT-323 package allows for space-efficient installation on PCBs, especially in compact electronic designs, maintaining a low profile with dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height.

Designed for surface mounting in compact SOT-323 package. 100 mA maximum collector current for low-power signal amplification. 45 V maximum collector-emitter voltage supports moderate voltage applications. Compliance with AEC-Q101 automotive standard ensures high reliability.

Ideal for industrial, automotive, and electronic device applications. Wide operating temperature range from -55°C to 150°C enhances versatility. Efficient 150 mW power dissipation rating aids thermal management. High transition frequency of 100 MHz suits high-speed switching.

Small dimensions enable compact PCB designs. Single transistor configuration with three pins simplifies circuit design.

This onsemi BC857BWT1G transistor is ideally suited for usage in industrial, automotive, manufacturing, and electronics design environments requiring reliable PNP transistor performance. For more semiconductor components, explore the Electronics & Electricals category at EnvMart.

Explore more products in our Bipolar Transistors category.

onsemi Small Signal PNP Transistor 100 mA, 45 V, 3-Pin SOT-323 BC857BWT1G
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Frequently Asked Questions

The maximum collector current for the BC857BWT1G transistor is 100 mA, making it suitable for low-power applications.

This model has a collector-emitter voltage rating of 45 V, allowing it to handle moderate voltage applications.

The minimum DC current gain (hFE) for the BC857BWT1G is 125, ensuring reliable amplification capabilities.

The maximum power dissipation for this transistor is 150 mW, which aids in efficient thermal management.

It operates within a temperature range from -55°C to 150°C, making it suitable for harsh environments.

This transistor comes in a compact 3-pin SOT-323 package, designed for surface mounting.

The maximum transition frequency is 100 MHz, which is suitable for high-frequency applications such as signal amplification.

The BC857BWT1G complies with the AEC-Q101 automotive standard, ensuring robustness for automotive applications.

The dimensions are 2.2 mm in length, 1.35 mm in width, and 1 mm in height, allowing for space-efficient installation.

This model features a single transistor configuration with three pins, simplifying circuit design.

The maximum emitter-base voltage (VEBO) for the BC857BWT1G is -5 V, which is important for circuit design considerations.

The country of origin for this transistor is India.

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