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onsemi Small Signal PNP Transistor 3-Pin SOT-23, -100 mA Collector Current, -45 V Collector Emitter Voltage BC857ALT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model BC857ALT1G
Width 1.4mm
Mount Type Surface
Series BC856ALT1G
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 125
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Designed as a single transistor configuration for surface-mount applications.
  • Maximum power dissipation of 225 mW supports moderate load conditions.
  • Allows operation in temperature range from -65°C to 150°C.
  • Provides a minimum DC current gain (hFE) of 125 for amplification applications.
  • Engineered for automotive standards AEC-Q101 ensuring reliability.
  • Compact dimensions measure 3.04mm length, 1.4mm width, and 1.11mm height.
  • Maximum transition frequency of 100 MHz supports high-speed switching.
  • Suitable for use in signal amplification, switching, and low noise applications.

Product Description

onsemi BC857ALT1G is a high-quality small signal PNP bipolar transistor designed for discrete semiconductor applications. It features a 3-pin SOT-23 surface mount package suitable for compact PCB layouts and automated production. The transistor supports a maximum DC collector current of -100 mA and a collector emitter voltage rating of -45 V, making it ideal for various low to moderate current amplification and switching circuits.

This transistor maintains reliable operation across a wide temperature range from -65°C up to 150°C, allowing use in demanding environments including automotive electronics compliant with AEC-Q101 standards. With a minimum DC current gain of 125, it provides efficient signal amplification with low noise characteristics.

The device dissipates up to 225 mW of power and operates with a maximum transition frequency of 100 MHz, suitable for high-speed switching and signal processing. Its compact dimensions of 3.04 mm length, 1.4 mm width, and 1.11 mm height enable space-constrained designs without compromising electrical performance.

Designed as a single PNP transistor for versatile discrete semiconductor applications. Surface mount SOT-23 package facilitates automated mounting and repair. Supports a maximum collector current of -100 mA and collector emitter voltage of -45 V.

Meets automotive grade AEC-Q101 reliability standards ensuring durability. Wide operating temperature from -65°C to 150°C for harsh conditions. Minimum DC current gain (hFE) of 125 ensures effective amplification. Compact size allows for efficient PCB space usage.

Maximum power dissipation of 225 mW handles moderate loads effectively. Transition frequency up to 100 MHz suitable for fast switching applications. Pin count of 3 enables straightforward circuit integration.

This bipolar transistor is ideal for industrial, automotive, consumer electronics, and communication equipment where compact, reliable amplification and switching are required. Its compliance with automotive standards and robust electrical specifications make it suited for both prototype and production use.

Explore more onsemi semiconductor solutions and Bipolar Transistors in the Electronics & Electricals category at EnvMart for advanced application needs.

onsemi Small Signal PNP Transistor 3-Pin SOT-23, -100 mA Collector Current, -45 V Collector Emitter Voltage BC857ALT1G
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Frequently Asked Questions

The maximum DC collector current for this model is -100 mA.

It has a collector-emitter voltage rating of -45 V.

This transistor operates within a temperature range of -65°C to 150°C.

The maximum power dissipation is 225 mW, suitable for moderate load conditions.

The minimum DC current gain (hFE) is 125, which is suitable for amplification applications.

It supports a maximum transition frequency of 100 MHz, making it suitable for high-speed switching.

This model comes in a 3-pin SOT-23 surface mount package.

It is engineered to meet automotive standards AEC-Q101, ensuring reliability in automotive applications.

The compact dimensions are 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height.

It is a small signal PNP bipolar transistor designed for discrete semiconductor applications.

This model is designed for surface mounting, facilitating automated production processes.

It is suitable for signal amplification, switching, and low noise applications in various electronic devices.

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