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onsemi Transistor NPN 100 mA 45 V 3-Pin SOT-23 BC850BLT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model BC850BLT1G
Width 1.4mm
Mount Type Surface
Series BC850
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 110
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Compact 3-pin SOT-23 surface mount design for space-efficient PCB layouts.
  • NPN transistor configuration suitable for switching and amplification applications.
  • Maximum collector current of 100 milliamps allowing moderate current handling.
  • High transition frequency up to 100 MHz ideal for medium frequency circuits.
  • Maximum power dissipation of 225 mW supports small signal applications.
  • Wide operating temperature range from -55°C to 150°C ensuring reliability under harsh conditions.
  • Automotive grade compliance with AEC-Q101 standard guarantees quality and durability.
  • Minimum DC current gain (hFE) of 110 for effective amplification performance.

Product Description

onsemi BC850BLT1G is a high-performance NPN bipolar small signal transistor designed for electronic circuit applications requiring efficient switching and amplification within moderate current and voltage limits. It features a compact surface mount package type SOT-23 with three pins enabling easy PCB mounting in constrained space designs.

This transistor supports a maximum collector current of 100 mA and a maximum collector emitter voltage of 45 V, making it suitable for various low power electronics and automotive circuits. It exhibits a minimum DC current gain (hFE) of 110 and a transition frequency (ft) of 100 MHz, promoting stable operation in high-frequency environments.

With a maximum power dissipation of 225 mW, BC850BLT1G is optimized for small signal processing. The device temperature operating range from -55°C minimum to 150°C maximum assures reliable performance even in extreme environmental conditions. Automotive-grade certification to AEC-Q101 ensures robustness for automotive and industrial electronics.

Housing dimensions are Length: 3.04 mm, Width: 1.4 mm, and Height: 1.11 mm, facilitating precision in circuit board layout and integration. The transistor’s NPN polarity and single transistor configuration provide versatile utility in switching and amplification tasks.

Compact 3-Pin SOT-23 surface mount package enhances PCB layout efficiency. NPN configuration optimized for switching and amplification circuits. Rated for 100 mA maximum collector current and 45 V collector-emitter voltage.

High transition frequency of 100 MHz supports medium frequency operation. Wide temperature range (-55°C to 150°C) supports harsh environment use. Compliance to automotive AEC-Q101 standard for high reliability. Small signal transistor suitable for electronics and automotive applications.

Minimal base-emitter voltage and collector-base voltages optimized for stable function.

This transistor is particularly suitable for industrial, automotive, and general electronic manufacturing sectors requiring reliable and efficient semiconductor components. It is designed to offer stable performance across a broad application range including signal amplification, switching devices in power control, and automotive electronics.

Explore EnvMart’s wide catalog of semiconductor components and discrete transistors for comprehensive solutions catering to diverse industrial applications.

Explore more products in our Bipolar Transistors category.

onsemi Transistor NPN 100 mA 45 V 3-Pin SOT-23 BC850BLT1G
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Frequently Asked Questions

The maximum collector current of the BC850BLT1G transistor is 100 mA.

The transition frequency of this NPN transistor is up to 100 MHz, making it suitable for medium frequency circuits.

The operating temperature range for the BC850BLT1G is from -55°C to 150°C.

This model uses a compact 3-pin SOT-23 surface mount package type.

The maximum power dissipation of the BC850BLT1G is 225 mW.

The minimum DC current gain (hFE) for the BC850BLT1G is 110.

The dimensions of the BC850BLT1G are 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height.

Yes, the BC850BLT1G is compliant with the automotive AEC-Q101 standard, ensuring quality and reliability.

The maximum collector-emitter voltage (Vceo) for the BC850BLT1G is 45 V.

The BC850BLT1G has a single NPN transistor configuration, suitable for various applications.

The maximum collector-base voltage (VCBO) for the BC850BLT1G is 50 V DC.

The BC850BLT1G is suitable for switching and amplification applications in low power electronics and automotive circuits.

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