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STMicroelectronics Switching Diode, Single, 8 A Forward Current, 2-Pin TO-220 Package, 1000 V Peak Reverse Voltage STTH810DI
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.9mm |
| Length | 10.4mm |
| Model | STTH810DI |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 60A |
| Maximum Forward Voltage Vf | 2V |
| Peak Reverse Recovery Time trr | 47ns |
| Maximum Forward Current If | 8A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1000V |
| Infineon Silicon Diode, Single, 7.5 A, 2-Pin 650 V TO-220 IDV15E65D2XKSA1Brand | Infineon |
Key Features
- Supports a maximum forward current of 8 amperes for efficient power handling.
- Constructed with silicon junction technology for reliable switching operation.
- Features a 2-pin through-hole mounting TO-220 package for easy PCB integration.
- Withstands a peak reverse voltage of 1000 volts, suitable for high voltage applications.
- Has a fast peak reverse recovery time of 47 nanoseconds enabling high-frequency switching.
- Operates reliably in temperatures ranging from -65°C to 175°C for robustness in harsh environments.
- Maximum forward voltage drop is 2 volts, ensuring energy efficient conduction.
- Designed to handle non-repetitive surge currents of up to 60 amperes safely.
Product Description
STMicroelectronics STTH810DI Switching Diode is a single silicon junction diode designed for high current and voltage rectification and switching applications in industrial and electronic circuits.
This diode supports a maximum forward current of 8 A with a peak reverse voltage rating of 1000 V and comes in a robust TO-220 package that facilitates easy mounting on printed circuit boards using through-hole technology.
Its peak reverse recovery time of 47 ns allows for efficient functioning in fast switching environments, making it suitable for power supplies, inverters, and motor control circuits.
The device exhibits a maximum forward voltage drop of 2 V, minimizing conduction losses and improving overall circuit efficiency. It can sustain high surge currents of up to 60 A, providing reliability against transient overloads.
Operating temperature range from -65°C to 175°C ensures its durability under harsh thermal conditions typically found in industrial and automotive electronics. The compact dimensions of 10.4 mm length, 15.9 mm height, and 4.6 mm width allow versatile integration into various electronic assemblies.
Supports 8 A maximum forward current for heavy-duty operation. Fast recovery time of 47 ns reduces switching losses in circuits. 1000 V peak reverse voltage for high-voltage blocking capability. Through-hole TO-220 package enables sturdy and reliable mounting.
Wide operating temperature range from -65°C to 175°C for industrial use. Maximum forward surge current of 60 A for transient tolerance. Compact size fits diverse design requirements. Single diode configuration simplifies circuit design.
This STTH810DI diode is ideal for applications in power electronics, industrial automation, motor drives, and high voltage switching circuits where reliability and performance are critical.
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Frequently Asked Questions
This model supports a maximum forward current of 8 amperes, allowing for efficient power handling in various applications.
The STTH810DI has a peak reverse voltage rating of 1000 volts, making it suitable for high voltage applications.
It comes in a TO-220 package, which facilitates easy through-hole mounting on printed circuit boards.
The peak reverse recovery time is 47 nanoseconds, enabling efficient functioning in fast switching environments.
This unit has dimensions of 10.4 mm in length, 15.9 mm in height, and 4.6 mm in width, allowing for versatile integration into various electronic assemblies.
The maximum forward voltage drop is 2 volts, which helps minimize conduction losses and improve circuit efficiency.
It operates reliably in temperatures ranging from -65°C to 175°C, making it suitable for harsh environments.
The STTH810DI is designed to handle non-repetitive surge currents of up to 60 amperes safely.
This model features a single diode configuration, simplifying circuit design and integration.
It is ideal for applications in power electronics, industrial automation, motor drives, and high voltage switching circuits.
The country of origin for this diode is India.
This diode is constructed with silicon junction technology, ensuring reliable switching operation.
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