onsemi Transistor NPN 50 mA 15 V 3-Pin Surface Mount SOT-23 MMBT918LT1G

onsemi MMBT918LT1G is a high-quality NPN bipolar transistor designed for switching and amplification in electronic circuits. It is housed in a compact 3-pin SOT-23 surface mount package which supports easy assembly on printed circuit boards (PCB) commonly used in industrial, commercial, and consumer electronic devices.

This transistor features a maximum DC collector current of 50 mA and a collector-emitter voltage rating of 15 V, making it suitable for low voltage switching applications as well as moderate power amplification tasks. The device can safely dissipate power up to 225 mW under typical conditions.

The minimum DC current gain (hFE) of 20 and a maximum transition frequency of 100 MHz allow for reliable high-frequency operation, making it a preferred choice in RF and signal processing circuits. The transistor’s maximum operating temperature of 150°C ensures robustness and long-term durability in demanding environments.

With precise dimensional characteristics of 3.04 mm in length, 1.4 mm in width, and 2.64 mm in height, the MMBT918LT1G fits well in space-constrained applications where compact size is critical. Its NPN polarity and single transistor configuration simplify integration into a variety of circuit topologies.

The MMBT918LT1G transistor is manufactured in China by onsemi, a globally recognized brand in semiconductor components known for quality and performance. It complies with standard packaging and electrical specifications for Bipolar Transistors.

Maximum DC collector current of 50 mA provides moderate current capacity. Collector-emitter voltage rating of 15 V supports low voltage switching applications. Compact SOT-23 surface mount package with three pins allows for easy PCB integration.

Maximum power dissipation is 225 mW ensuring safe operating limits. Minimum DC current gain (hFE) of 20 supports amplification. High transition frequency of 100 MHz suitable for RF applications. Maximum operating temperature rating is 150°C for reliable performance.

NPN transistor configuration with single transistor polarity. Dimensions: Length 3.04 mm, Width 1.4 mm, Height 2.64 mm for compact design. Manufactured in China by onsemi.

This transistor is ideal for industrial electronics, power management, signal processing, and communication equipment. The small form factor and reliable electrical parameters make it suitable for use in laboratory, manufacturing, and commercial electronic projects and applications. Browse more semiconductor and transistor products on EnvMart for your precise technical and industrial requirements.