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onsemi General Purpose PNP Transistor 2 A, -50 V, 3-Pin PCP Surface Mount 2SB1123T-TD-E

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.5mm
Length 4.5mm
Model 2SB1123T-TD-E
Width 4mm
Mount Type Surface
Series 2SB1123T
Maximum Operating Temperature 150°C
Package Type PCP
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -50V
Minimum DC Current Gain hFE 40
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -60V
Maximum Power Dissipation Pd 1.3W
Maximum DC Collector Current Idc -2A
Transistor Configuration Single
Maximum Transition Frequency ft 150MHz
Diodes Inc 2DA1971-7 Transistor, -500 mA PNP, -400 V, 3-Pin SOT-89Brand DiodesZetex

Key Features

  • This transistor is designed in a 3-pin PCP package suitable for surface mounting.
  • It operates reliably over a temperature range of -55°C to 150°C.
  • The device provides a minimum DC current gain (hFE) of 40.
  • It supports a maximum power dissipation of 1.3 W, suitable for moderate power applications.
  • With a maximum transition frequency of 150 MHz, it offers good response for high frequency circuits.
  • The transistor is configured as a single PNP device, ideal for amplifier and switching applications.
  • Pin count is 3 with compact dimensions of 1.5 mm height, 4.5 mm length, and 4 mm width.
  • Maximum collector base voltage is rated at -60 V, and emitter base voltage at -6 V.

Product Description

onsemi 2SB1123T-TD-E is a robust general purpose PNP bipolar transistor tailored for a variety of electronic applications requiring up to 2 A collector current and a maximum voltage rating of 50 V.

The transistor is housed in a 3-pin PCP package designed for surface mount technology, facilitating compact and efficient PCB layouts. Operating temperature range from -55°C to 150°C ensures reliability under diverse environmental conditions.

This device features a minimum current gain (hFE) of 40, making it suitable for amplification and switching operations in power and signal circuits.

Its maximum power dissipation of 1.3 W and a transition frequency of up to 150 MHz provide a balance between power handling and frequency response, addressing medium power and moderately high-frequency applications.

The 2SB1123T series by onsemi represents a reliable line of PNP transistors with solid state performance characteristics beneficial for industrial, electronic component manufacturing, consumer electronics, and various semiconductor-based systems.

This transistor is designed in a 3-pin PCP package suitable for surface mounting. Supports a collector current of up to 2 A and collector emitter voltage up to 50 V. Features a minimum DC current gain (hFE) of 40 and maximum transition frequency of 150 MHz.

Operates within a wide temperature range from -55°C to 150°C, ensuring durability. Compact dimensions allow efficient space utilization in PCB designs.

Widely useful in circuits requiring medium power PNP transistor switching and amplification, the 2SB1123T-TD-E is a dependable choice for engineers and technicians seeking quality semiconductor components.

Explore more Bipolar Transistors and discrete semiconductors in the Electronics & Electricals category on EnvMart.

onsemi General Purpose PNP Transistor 2 A, -50 V, 3-Pin PCP Surface Mount 2SB1123T-TD-E
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Frequently Asked Questions

The maximum DC collector current for this model is -2 A.

It operates reliably over a temperature range of -55°C to 150°C.

The minimum DC current gain (hFE) is 40.

This model has compact dimensions of 1.5 mm in height, 4.5 mm in length, and 4 mm in width.

The maximum power dissipation is 1.3 W.

It is housed in a 3-pin PCP package designed for surface mounting.

The maximum collector-emitter voltage (Vceo) is rated at -50 V.

The maximum transition frequency is 150 MHz.

The maximum emitter-base voltage (VEBO) is rated at -6 V.

It is suitable for amplifier and switching applications in power and signal circuits.

The transistor is a PNP type.

The country of origin for this model is India.

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