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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 4.5mm |
| Model | 2SB1123T-TD-E |
| Width | 4mm |
| Mount Type | Surface |
| Series | 2SB1123T |
| Maximum Operating Temperature | 150°C |
| Package Type | PCP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -50V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -6V |
| Maximum Collector Base Voltage VCBO | -60V |
| Maximum Power Dissipation Pd | 1.3W |
| Maximum DC Collector Current Idc | -2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 150MHz |
| Diodes Inc 2DA1971-7 Transistor, -500 mA PNP, -400 V, 3-Pin SOT-89Brand | DiodesZetex |
onsemi 2SB1123T-TD-E is a robust general purpose PNP bipolar transistor tailored for a variety of electronic applications requiring up to 2 A collector current and a maximum voltage rating of 50 V.
The transistor is housed in a 3-pin PCP package designed for surface mount technology, facilitating compact and efficient PCB layouts. Operating temperature range from -55°C to 150°C ensures reliability under diverse environmental conditions.
This device features a minimum current gain (hFE) of 40, making it suitable for amplification and switching operations in power and signal circuits.
Its maximum power dissipation of 1.3 W and a transition frequency of up to 150 MHz provide a balance between power handling and frequency response, addressing medium power and moderately high-frequency applications.
The 2SB1123T series by onsemi represents a reliable line of PNP transistors with solid state performance characteristics beneficial for industrial, electronic component manufacturing, consumer electronics, and various semiconductor-based systems.
This transistor is designed in a 3-pin PCP package suitable for surface mounting. Supports a collector current of up to 2 A and collector emitter voltage up to 50 V. Features a minimum DC current gain (hFE) of 40 and maximum transition frequency of 150 MHz.
Operates within a wide temperature range from -55°C to 150°C, ensuring durability. Compact dimensions allow efficient space utilization in PCB designs.
Widely useful in circuits requiring medium power PNP transistor switching and amplification, the 2SB1123T-TD-E is a dependable choice for engineers and technicians seeking quality semiconductor components.
Explore more Bipolar Transistors and discrete semiconductors in the Electronics & Electricals category on EnvMart.
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