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onsemi Power PNP Transistor, 2 A Collector Current, 50 V Collector-Emitter Voltage, 3-Pin PCP Package 2SB1123T-TD-E

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 1.5mm
Length 4.5mm
Model 2SB1123T-TD-E
Width 4mm
Mount Type Surface
Series 2SB1123T
Maximum Operating Temperature 150°C
Package Type PCP
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -50V
Minimum DC Current Gain hFE 40
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -60V
Maximum Power Dissipation Pd 1.3W
Maximum DC Collector Current Idc -2A
Transistor Configuration Single
Maximum Transition Frequency ft 150MHz

Key Features

  • Supports a maximum collector base voltage of 60 V.
  • Minimum DC current gain (hFE) rating of 40 ensures reliable amplification.
  • Maximum power dissipation of 1.3 W in compact dimensions of 4.5 mm length by 4 mm width.
  • Operates over a temperature range from -55°C to 150°C for diverse applications.
  • Maximum transition frequency of 150 MHz suitable for high frequency switching and amplification.
  • Designed as a general purpose transistor with single transistor configuration.
  • Surface mount PCP package provides ease of assembly into compact circuits.
  • Manufactured in China with high quality standards though not automotive qualified.

Product Description

The onsemi 2SB1123T-TD-E is a general purpose PNP bipolar transistor designed to deliver a maximum collector current of 2 A and withstand a collector-emitter voltage up to 50 V. Packaged in a compact 3-pin PCP surface mount form factor, this transistor suits applications in power amplification, switching, and industrial electronics.

With a minimum DC current gain (hFE) of 40, this device ensures consistent signal amplification. The transistor supports a maximum collector base voltage of 60 V and an emitter base voltage rating of 6 V, enabling robust operation under demanding electrical conditions.

The device dissipates power up to 1.3 W and operates reliably across a wide temperature range from -55°C minimum to 150°C maximum, making it suitable for industrial, manufacturing, and HVAC control uses. Its transition frequency of 150 MHz allows efficient operation in medium frequency switching circuits.

Measuring 4.5 mm in length, 4 mm in width, and 1.5 mm in height, the compact package type facilitates integration into densely packed electronic assemblies. This transistor has a single transistor configuration and is designed for surface mount applications.

While the 2SB1123T-TD-E series is not automotive qualified, it is produced with quality manufacturing standards in China. The device's robust specifications make it a versatile component in laboratory setups, commercial electronics, and industrial control systems.

Supports a maximum collector base voltage of 60 V. Minimum DC current gain (hFE) rating of 40 ensures reliable amplification. Maximum power dissipation of 1.3 W in compact dimensions of 4.5 mm length by 4 mm width. Operates over a temperature range from -55°C to 150°C for diverse applications.

Maximum transition frequency of 150 MHz suitable for high frequency switching and amplification. Designed as a general purpose transistor with single transistor configuration. Surface mount PCP package provides ease of assembly into compact circuits.

Manufactured in China with high quality standards though not automotive qualified. Explore more on Bipolar Transistors and semiconductor components available at EnvMart to optimize your electronic designs and production efficiency.

onsemi Power PNP Transistor, 2 A Collector Current, 50 V Collector-Emitter Voltage, 3-Pin PCP Package 2SB1123T-TD-E
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Frequently Asked Questions

The maximum collector current for the 2SB1123T-TD-E is 2 A.

This model has a maximum collector-emitter voltage rating of 50 V.

The minimum DC current gain (hFE) rating is 40, ensuring reliable amplification.

It can dissipate a maximum power of 1.3 W.

The operating temperature range is from -55°C to 150°C.

The maximum transition frequency is 150 MHz, suitable for high frequency switching and amplification.

The dimensions are 4.5 mm in length, 4 mm in width, and 1.5 mm in height.

It is packaged in a 3-pin PCP surface mount configuration.

No, the 2SB1123T-TD-E is not automotive qualified.

The maximum collector-base voltage is 60 V.

The maximum emitter-base voltage rating is 6 V.

It is designed for general purpose applications including power amplification and switching in industrial electronics.

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