onsemi Darlington Transistor NPN 5A 100V TO-220 3-Pin MJF122G

onsemi MJF122G is a high-performance NPN Darlington transistor designed for industrial and electronic applications requiring efficient switching and amplification. Its maximum continuous collector current rating of 5 amperes and collector emitter voltage of 100 volts make it suitable for power control circuits and amplification in discrete semiconductor applications.

Housed in a TO-220 3-pin through-hole mount package, the device offers ease of integration on printed circuit boards with standard mounting options. The transistor features a high DC current gain of 1000, optimizing signal amplification with minimal input current.

The device ensures reliability across a wide temperature range from -65°C to 150°C, enabling usage in harsh industrial environments. The maximum power dissipation rating is 2 watts, supporting moderate power applications without requiring extensive heatsinking in typical scenarios.

Key electrical characteristics include a maximum emitter base voltage of 5 volts and maximum collector emitter saturation voltage of 2 volts, providing stable operation under switching conditions. The package dimensions are 16.12 mm in height and 10.63 mm in length, enabling compact circuit designs.

Maximum continuous collector current is 5 amperes. Rated collector emitter voltage of 100 volts. High DC current gain of 1000 (hFE). Maximum power dissipation is 2 watts. 3-pin through-hole mounting TO-220 package. Operates reliably between -65°C and 150°C.

NPN transistor polarity suitable for switching and amplification. Maximum collector emitter saturation voltage of 2 volts. Maximum emitter base voltage is 5 volts. Compact dimensions: 16.12 mm height and 10.63 mm length.

This transistor is ideal for discrete semiconductor use in electronic equipment, power management circuits, and industrial control systems. Its high gain and robust ratings make it suitable for various applications requiring reliable power amplification and switching.

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