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onsemi NPN Bipolar Transistor, 600 mA DC Collector Current, 40 V Vceo, 225 mW Power Dissipation, Surface Mount MMBT2222ALT3G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.64mm
Length 3.04mm
Model MMBT2222ALT3G
Width 1.4mm
Mount Type Surface
Series MMBT2222AL
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 30
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 75V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum DC Collector Current of 600 mA supports medium power switching applications.
  • Collector Emitter Voltage rating of 40 V ensures suitability for various circuit conditions.
  • Low power dissipation of 225 mW enables efficient thermal management.
  • High transition frequency of 100 MHz for good switching performance.
  • Compact SOT-23 surface mount package with height 2.64 mm, length 3.04 mm, and width 1.4 mm.
  • Minimum DC Current Gain (hFE) of 30 providing amplification capabilities.
  • Automotive grade compliant with AEC-Q101 standard ensures reliability.
  • Maximum operating temperature up to 150°C for harsh environment usage.

Product Description

onsemi MMBT2222ALT3G is a general-purpose NPN bipolar transistor widely used in electronic circuits for switching and amplification. Rated for a maximum DC collector current of 600 mA and a collector emitter voltage of 40 V, it provides reliable performance in low to medium power applications.

The transistor features a compact 3-pin SOT-23 package, ideal for surface mounting on printed circuit boards (PCBs). The package dimensions are 3.04 mm in length, 1.4 mm in width, and 2.64 mm in height, supporting efficient space utilization in compact electronics.

It offers a maximum power dissipation of 225 mW and a transition frequency of 100 MHz, suitable for high-frequency switching tasks. The minimum DC current gain (hFE) is 30, making it effective for signal amplification. The transistor configuration is single with NPN polarity.

Designed to meet the automotive industry's AEC-Q101 standard, this transistor assures quality and durability for automotive and industrial electronics. It can operate safely up to 150°C, supporting use in elevated temperature environments.

The MMBT2222ALT3G is versatile for applications in industrial, laboratory, automotive circuit design, and other commercial electronics requiring dependable bipolar transistors. Maximum DC Collector Current of 600 mA supports medium power switching applications.

Collector Emitter Voltage rating of 40 V ensures suitability for various circuit conditions. Low power dissipation of 225 mW enables efficient thermal management. High transition frequency of 100 MHz for good switching performance.

Compact SOT-23 surface mount package with height 2.64 mm, length 3.04 mm, and width 1.4 mm. Minimum DC Current Gain (hFE) of 30 providing amplification capabilities. Automotive grade compliant with AEC-Q101 standard ensures reliability.

Maximum operating temperature up to 150°C for harsh environment usage. NPN transistor polarity suitable for general purpose amplification and switching circuits.

Available for electronic component manufacturing, repair, and educational prototyping with the assurance of onsemi brand quality and standards compliance. Explore more Bipolar Transistors and semiconductor components suitable for various electronics projects and industrial applications on EnvMart.

onsemi NPN Bipolar Transistor, 600 mA DC Collector Current, 40 V Vceo, 225 mW Power Dissipation, Surface Mount MMBT2222ALT3G
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Frequently Asked Questions

The maximum DC collector current for the MMBT2222ALT3G is 600 mA, making it suitable for medium power switching applications.

This model has a collector-emitter voltage rating of 40 V, ensuring its suitability for various circuit conditions.

The MMBT2222ALT3G can dissipate a maximum power of 225 mW, which enables efficient thermal management in applications.

It features a high transition frequency of 100 MHz, which is beneficial for good switching performance.

The SOT-23 package has dimensions of 3.04 mm in length, 1.4 mm in width, and 2.64 mm in height.

The minimum DC current gain (hFE) is 30, providing effective amplification capabilities.

Yes, it is compliant with the AEC-Q101 standard, ensuring reliability for automotive applications.

The maximum operating temperature for the MMBT2222ALT3G is 150°C, allowing it to function in harsh environments.

This model has a single NPN transistor configuration, suitable for general-purpose amplification and switching circuits.

The maximum emitter-base voltage (VEBO) for this transistor is 6 V.

This transistor has a pin count of 3, fitting the standard for SOT-23 packages.

The MMBT2222ALT3G is versatile for applications in industrial, laboratory, automotive circuit design, and other commercial electronics requiring dependable bipolar transistors.

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