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onsemi Small Signal NPN Transistor 200 mA, 45 V, SOT-23 Package, Automotive AEC-Q101 MMBT6429LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.64mm
Length 3.04mm
Model MMBT6429LT1G
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 250
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 55V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 200mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor has a maximum DC collector current of 200 mA.
  • Maximum collector-emitter voltage is rated up to 45 volts.
  • Equipped with a compact 3-pin SOT-23 surface mount package for efficient PCB integration.
  • Automotive grade AEC-Q101 standard ensures reliability in automotive environments.
  • Offers a minimum DC current gain (hFE) of 250 for consistent amplification.
  • Maximum power dissipation is 225 mW, suitable for small signal applications.
  • Supports a maximum operating temperature of 150°C for robust thermal performance.
  • Designed with NPN transistor polarity for switching and amplification uses.

Product Description

onsemi MMBT6429LT1G is a high-performance small signal NPN transistor designed for surface mount applications. It supports a maximum DC collector current of 200 mA and can withstand up to 45 V collector-emitter voltage, making it suitable for electronic devices requiring reliable switching and amplification.

The transistor comes in a compact SOT-23 package with three pins, facilitating efficient layout and soldering on printed circuit boards (PCBs). Its automotive qualification to AEC-Q101 standards ensures it meets strict quality and reliability criteria, especially for automotive and industrial use cases.

Key electrical parameters include a minimum DC current gain (hFE) of 250, maximum collector-base voltage of 55 V, and a peak operating temperature of 150°C. The device dissipates up to 225 mW power, suited for low power signal processing tasks.

Typical applications of the MMBT6429LT1G include electronic circuits in industrial controls, automotive electronics, instrumentation, and consumer electronics where compact size and reliability are essential.

This transistor has a maximum DC collector current of 200 mA. Maximum collector-emitter voltage is rated up to 45 volts. Equipped with a compact 3-pin SOT-23 surface mount package for efficient PCB integration. Automotive grade AEC-Q101 standard ensures reliability in automotive environments.

Offers a minimum DC current gain (hFE) of 250 for consistent amplification. Maximum power dissipation is 225 mW, suitable for small signal applications. Supports a maximum operating temperature of 150°C for robust thermal performance.

Designed with NPN transistor polarity for switching and amplification uses. Explore the extensive range of high-quality discrete semiconductors at EnvMart, including advanced Bipolar Transistors like the onsemi MMBT6429LT1G.

onsemi Small Signal NPN Transistor 200 mA, 45 V, SOT-23 Package, Automotive AEC-Q101 MMBT6429LT1G
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Frequently Asked Questions

The maximum DC collector current for the MMBT6429LT1G is 200 mA.

It can withstand a maximum collector-emitter voltage of 45 V.

This model is equipped with a compact SOT-23 surface mount package.

The minimum DC current gain (hFE) is 250, which ensures consistent amplification.

The maximum power dissipation for this transistor is 225 mW.

The maximum operating temperature is 150°C, providing robust thermal performance.

The dimensions are 2.64 mm in height, 3.04 mm in length, and 1.4 mm in width.

It complies with the automotive standard AEC-Q101, ensuring reliability in automotive environments.

The SOT-23 package has 3 pins.

The maximum collector-base voltage (VCBO) is rated at 55 V.

Typical applications include industrial controls, automotive electronics, instrumentation, and consumer electronics.

This model uses a single transistor configuration with NPN polarity.

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